Electronic and optical properties of the antifluorite semiconductors Be2C and Mg2X (X = C, Si, Ge) under hydrostatic pressure

Journal of Physics and Chemistry of Solids

Volumn 69, Issue 7, 2008, Pages 1775-1781

  Kalarasse, F ^a   Bennecer, B ^a  

^a UNIVERSITY OF GUELMA   (Algeria)

Author keywords

A. Semiconductors; C. Ab initio calculations; C. High pressure; D. Electronic properties; D. Optical properties

Indexed keywords

ELECTRONIC PROPERTIES; ENERGY GAP; HYDROSTATIC PRESSURE; OPTICAL PROPERTIES; OPTIMIZATION; SEMICONDUCTOR MATERIALS;

AB INITIO CALCULATIONS; ANTIFLUORITE COMPOUNDS; BANDGAP PRESSURE COEFFICIENTS; STRUCTURAL PARAMETERS;

BERYLLIUM COMPOUNDS;

EID: 44549086279     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2008.01.007     Document Type: Article

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