Optimization of integrated transistors for very high frequency DC-DC converters

IEEE Transactions on Power Electronics

Volumn 28, Issue 7, 2013, Pages 3614-3626

  Sagneri, Anthony D ^a   Anderson, David I ^b   Perreault, David J ^c  

^a OnChip Power Corporation   (United States)

^b NATIONAL SEMICONDUCTOR CORPORATION   (United States)

^c MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Boost converter; LDMOS; Power transistors; Safe operating area; Semiconductors; Transistor modeling; Very high frequency (VHF) power electronics

Indexed keywords

BOOST CONVERTER; LDMOS; POWER TRANSISTORS; SAFE OPERATING AREA; TRANSISTOR MODELING; VERY HIGH FREQUENCY POWER;

DC-DC CONVERTERS; HETEROJUNCTION BIPOLAR TRANSISTORS; OPTIMIZATION; POWER ELECTRONICS; SEMICONDUCTOR MATERIALS; SOFT SWITCHING;

TRANSISTORS;

EID: 84872021924     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2012.2222048     Document Type: Article

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