Highly arsenic doped CdTe layers for the back contacts of CdTe solar cells

Materials Research Society Symposium Proceedings

Volumn 1012, Issue , 2007, Pages 367-372

  Barrioz, Vincent ^a   Proskuryakov, Yuri Y ^b   Jones, Eurig W ^a   Major, Jon D ^b   Irvine, Stuart J C ^a   Durose, Ken ^b   Lamb, Dan A ^a  

^a BANGOR UNIVERSITY   (United Kingdom)

^b DURHAM UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; CURRENT VOLTAGE CHARACTERISTICS; METALLIZING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR DOPING; ARSENIC; CADMIUM CHLORIDE; ELECTRIC RESISTANCE; ETCHING; OPEN CIRCUIT VOLTAGE; SOLAR CELLS;

ARSENIC CONCENTRATIONS; CONTACT ETCHING; OPEN-CIRCUIT VOLTAGE; SERIES RESISTANCE; ARSENIC CONCENTRATION; BARRIER HEIGHTS; CDTE SOLAR CELLS; CONTACT AREAS; CONTROL DEVICE; CURRENT VOLTAGE; METAL ORGANIC CHEMICAL VAPOUR DEPOSITIONS; SERIES RESISTANCES;

SOLAR CELLS; CADMIUM TELLURIDE;

EID: 38549127682     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1012-y12-08     Document Type: Conference Paper

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