-
2
-
-
0036034175
-
Recent developments in rare-earth doped materials for optoelectronics
-
DOI 10.1016/S0079-6727(02)00014-9, PII S0079672702000149
-
Kenyon, A. J. Recent developments in rare-earth doped materials for optoelectronics. Prog. Quantum Electron. 26, 225-284 (2002). (Pubitemid 35256036)
-
(2002)
Progress in Quantum Electronics
, vol.26
, Issue.4-5
, pp. 225-284
-
-
Kenyon, A.J.1
-
4
-
-
0024668337
-
Luminescence of erbium implanted in various semiconductors. IV, III-V and II-VI materials
-
Favennec, P. N., Haridon, H. L., Salvi, M., Muotonnet, D. & Le Guillo, Y. Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials. Electron. Lett. 25, 718-719 (1989). (Pubitemid 20698723)
-
(1989)
Electronics Letters
, vol.25
, Issue.11
, pp. 718-719
-
-
Favennec, P.N.1
L'Haridon, H.2
Salvi, M.3
Moutonnet, D.4
Le Guillou, Y.5
-
5
-
-
18044371838
-
Colossal magnetic moment of Gd in GaN
-
Dhar, S., Brandt, O., Ramsteiner, M., Sapega, V. F. & Ploog, K. H. Colossal magnetic moment of Gd in GaN. Phys. Rev. Lett. 94, 037205-1/4 (2005).
-
(2005)
Phys. Rev. Lett.
, vol.94
-
-
Dhar, S.1
Brandt, O.2
Ramsteiner, M.3
Sapega, V.F.4
Ploog, K.H.5
-
6
-
-
77949307528
-
Gd-doped GaN studied with element specificity: Very small polarization of Ga, paramagnetism of Gd and the formation of magnetic clusters
-
Ney, A., Kammermeier, T., Ollefs, K., Ney, V., Ye, S., Dhar, S., Ploog, K. H., Röver, M., Malindretos, J., Rizzi, A., Wilhelm, F. & Rogalev, A. Gd-doped GaN studied with element specificity: Very small polarization of Ga, paramagnetism of Gd and the formation of magnetic clusters. J. Magn. Magn.Mater. 322, 1162-1166 (2010).
-
(2010)
J. Magn. Magn.Mater.
, vol.322
, pp. 1162-1166
-
-
Ney, A.1
Kammermeier, T.2
Ollefs, K.3
Ney, V.4
Ye, S.5
Dhar, S.6
Ploog, K.H.7
Röver, M.8
Malindretos, J.9
Rizzi, A.10
Wilhelm, F.11
Rogalev, A.12
-
7
-
-
33751226290
-
Rare earth doped III-nitrides for optoelectronics
-
DOI 10.1051/epjap:2006122
-
O'Donnell, K. P. & Hourahine, B. Rare earth doped III-nitrides for optoelectronics. Eur. Phys. J.: Appl. Phys. 36, 91-103 (2006). (Pubitemid 44786994)
-
(2006)
EPJ Applied Physics
, vol.36
, Issue.2
, pp. 91-103
-
-
O'Donnell, K.P.1
Hourahine, B.2
-
8
-
-
3342960393
-
Origin of luminescence from InGaN diodes
-
O'Donnell, K. P., Martin, R. W. & Middleton, P. G. Origin of luminescence from InGaN diodes. Phys. Rev. Lett. 82, 237-240 (1999). (Pubitemid 129661994)
-
(1999)
Physical Review Letters
, vol.82
, Issue.1
, pp. 237-240
-
-
O'Donnell, K.P.1
Martin, R.W.2
Middleton, P.G.3
-
9
-
-
0032621608
-
Red light emission by photoluminescence and electroluminescence from Eu-doped GaN
-
Heikenfeld, J., Garter, M., Lee, D. S., Birkhahn, R. &Steckl, A. J. Red light emission by photoluminescence and electroluminescence from Eu-doped GaN. Appl. Phys. Lett. 75, 1189-1191 (1999). (Pubitemid 129308577)
-
(1999)
Applied Physics Letters
, vol.75
, Issue.9
, pp. 1189-1191
-
-
Heikenfeld, J.1
Garter, M.2
Lee, D.S.3
Birkhahn, R.4
Steckl, A.J.5
-
10
-
-
68249130465
-
Roomtemperature red emission from a p-type/europium-doped/n-type gallium nitride light-emitting diode under current injection
-
Nishikawa, A., Kawasaki, T., Furukawa, N., Terai, Y. & Fujiwara, Y. Roomtemperature red emission from a p-type/europium-doped/n-type gallium nitride light-emitting diode under current injection. Appl. Phys. Express 2, 071004-1/3 (2009).
-
(2009)
Appl. Phys. Express
, vol.2
-
-
Nishikawa, A.1
Kawasaki, T.2
Furukawa, N.3
Terai, Y.4
Fujiwara, Y.5
-
11
-
-
25144443990
-
Demonstration of a visible laser on silicon using Eu-doped GaN thin films
-
Park, J. H. & Steckl, A. J. Demonstration of a visible laser on silicon using Eu-doped GaN thin films. J. Appl. Phys. 98, 056108-1/3 (2005).
-
(2005)
J. Appl. Phys.
, vol.98
-
-
Park, J.H.1
Steckl, A.J.2
-
12
-
-
0345566219
-
Magnetic properties of Eu-doped GaN grown by molecular beam epitaxy
-
Hashimoto, M., Yanase, A., Asano, R., Tanaka,H. &Bang,H.Magnetic properties of Eu-doped GaN grown by molecular beam epitaxy. Jpn. J. Appl. Phys. 42, L1112-L1115 (2003).
-
(2003)
Jpn. J. Appl. Phys.
, vol.42
-
-
Hashimoto, M.1
Yanase, A.2
Asano, R.3
Tanaka, H.4
Bang, H.5
-
13
-
-
33749325131
-
Optical and magnetic properties of Eu-doped GaN
-
Hite, J., Thaler, G. T., Khanna, R., Abernathy, C. R., Pearton, S. J., Park, J. H., Steckl, A. J. & Zavada, J. M. Optical and magnetic properties of Eu-doped GaN. Appl. Phys. Lett. 89, 132119-1/3 (2006).
-
(2006)
Appl. Phys. Lett.
, vol.89
-
-
Hite, J.1
Thaler, G.T.2
Khanna, R.3
Abernathy, C.R.4
Pearton, S.J.5
Park, J.H.6
Steckl, A.J.7
Zavada, J.M.8
-
14
-
-
84859054847
-
Zeeman splittings of the 5D0-7F2 transitions of Eu31 ions implanted into GaN
-
mrsf10-1290-i03-06,doi:10.1557/opl.2011.241
-
Kachkanov, V., O'Donnell, K. P., Rice, C.,Wolverson, D., Martin, R.W., Lorenz, K., Alves, E. & Bockowski, M. Zeeman splittings of the 5D0-7F2 transitions of Eu31 ions implanted into GaN. Mater. Res. Soc. Proc. 1290, mrsf10-1290-i03-06, doi:10.1557/opl.2011.241 (2011).
-
(2011)
Mater. Res. Soc. Proc.
, pp. 1290
-
-
Kachkanov, V.1
O'Donnell, K.P.2
Rice, C.3
Wolverson, D.4
Martin, R.W.5
Lorenz, K.6
Alves, E.7
Bockowski, M.8
-
15
-
-
0001634152
-
Strong magnetic dichroism predicted in the M4,5 X-ray absorption spectra of magnetic rare-earth materials
-
Thole, B. T., van der Laan, G. & Sawatzky, G. A. Strong magnetic dichroism predicted in the M4,5 X-ray absorption spectra of magnetic rare-earth materials. Phys. Rev. Lett. 55, 2086-2088 (1985).
-
(1985)
Phys. Rev. Lett.
, vol.55
, pp. 2086-2088
-
-
Thole, B.T.1
Van Der Laan, G.2
Sawatzky, G.A.3
-
16
-
-
77955783560
-
Effect of growth temperature on Eu-doped GaN layers grown by organometallic vapor phase epitaxy
-
Kawasaki, T., Nishikawa, A., Furukawa, N., Terai, Y. & Fujiwara, Y. Effect of growth temperature on Eu-doped GaN layers grown by organometallic vapor phase epitaxy. Phys. Stat. Sol. (c) 7, 2040-2042 (2010).
-
(2010)
Phys. Stat. Sol. (C)
, vol.7
, pp. 2040-2042
-
-
Kawasaki, T.1
Nishikawa, A.2
Furukawa, N.3
Terai, Y.4
Fujiwara, Y.5
-
17
-
-
77956800405
-
Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy
-
Lorenz, K., Alves, E., Roqan, I. S., O'Donnell, K. P., Nishikawa, A., Fujiwara, Y. & Boćkowski, M. Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy. Appl. Phys. Lett. 97, 111911-1/3 (2010).
-
(2010)
Appl. Phys. Lett.
, vol.97
-
-
Lorenz, K.1
Alves, E.2
Roqan, I.S.3
O'Donnell, K.P.4
Nishikawa, A.5
Fujiwara, Y.6
Boćkowski, M.7
-
19
-
-
35348914360
-
Spectroscopic and energy transfer studies of Eu31 centers in GaN
-
Peng, H., Lee, C.-W., Everitt, H. O., Munasinghe, C., Lee, D. S. & Steckl, A. J. Spectroscopic and energy transfer studies of Eu31 centers in GaN. J. Appl. Phys. 102, 073520-1/9 (2007).
-
(2007)
J. Appl. Phys.
, vol.102
-
-
Peng, H.1
Lee, C.-W.2
Everitt, H.O.3
Munasinghe, C.4
Lee, D.S.5
Steckl, A.J.6
-
20
-
-
19244382809
-
Valence transition of Eu ions in GaN near the surface
-
DOI 10.1016/S0022-0248(01)02150-9, PII S0022024801021509 II
-
Maruyama, T., Morishima, S., Bang, H., Akimoto, K. & Nanishi, Y. Valence transition of Eu ions in GaN near the surface. J. Cryst. Growth 237-239, 1167-1171 (2002). (Pubitemid 34545097)
-
(2002)
Journal of Crystal Growth
, vol.237-239
, Issue.1-4
, pp. 1167-1171
-
-
Maruyama, T.1
Morishima, S.2
Bang, H.3
Akimoto, K.4
Nanishi, Y.5
-
21
-
-
12044256125
-
Origin of luminescence from porous silicon deduced by synchrotron-light-induced optical luminescence
-
Sham,T. K., Jiang, D. T., Coulthard, I., Lorimer, J. W., Feng, X. H., Tan, K. H., Frigo, S. P., Rosenberg, R. A., Houghton, D. C. & Bryskiewicz, B. Origin of luminescence from porous silicon deduced by synchrotron-light- induced optical luminescence. Nature 363, 331-334 (1993).
-
(1993)
Nature
, vol.363
, pp. 331-334
-
-
Sham, T.K.1
Jiang, D.T.2
Coulthard, I.3
Lorimer, J.W.4
Feng, X.H.5
Tan, K.H.6
Frigo, S.P.7
Rosenberg, R.A.8
Houghton, D.C.9
Bryskiewicz, B.10
-
22
-
-
33749186627
-
Hitchhiker's guide to multiplet calculations
-
van der Laan, G. Hitchhiker's guide to multiplet calculations. Lect. Notes Phys. 697, 143-199 (2006).
-
(2006)
Lect. Notes Phys.
, vol.697
, pp. 143-199
-
-
Van Der Laan, G.1
-
23
-
-
36049055113
-
Reevaluation of X-ray atomic energy levels
-
Bearden, J. A. & Burr, A. F. Reevaluation of X-ray atomic energy levels. Rev. Mod. Phys. 39, 125-142 (1967).
-
(1967)
Rev. Mod. Phys.
, vol.39
, pp. 125-142
-
-
Bearden, J.A.1
Burr, A.F.2
-
24
-
-
20444412301
-
Determination of the Eu(II)/Eu(III) ratios in minerals by X-ray absorption near-edge structure (XANES) and its application to hydrothermal deposits
-
DOI 10.1180/0026461056920245
-
Takanashi, Y., Kolonin, G. R., Shironosova, G. P., Kupriyanova, I. I., Uruga, T. & Shimuzu, H. Determination of the Eu(II)/Eu(III) ratios in minerals by X-ray absorption near-edge structure (XANES) and its application to hydrothermal deposits. Mineral. Mag. 69, 179-190 (2005). (Pubitemid 40801295)
-
(2005)
Mineralogical Magazine
, vol.69
, Issue.2
, pp. 179-190
-
-
Takahashi, Y.1
Kolonin, G.R.2
Shironosova, G.P.3
Kupriyanova, I.I.4
Uruga, T.5
Shimizu, H.6
-
25
-
-
60349098545
-
Temperature dependence of Eu 4f and Eu 5d magnetizations in the filled skutterudite EuFe4Sb12
-
Krishnamurthy, V. V., Keavney, D. J., Haskel, D., Lang, J. C., Srajer, G., Sales, B. C., Mandrus, D. G. & Robertson, J. L. Temperature dependence of Eu 4f and Eu 5d magnetizations in the filled skutterudite EuFe4Sb12. Phys. Rev. B 79, 014426-1/8 (2009).
-
(2009)
Phys. Rev. B
, vol.79
-
-
Krishnamurthy, V.V.1
Keavney, D.J.2
Haskel, D.3
Lang, J.C.4
Srajer, G.5
Sales, B.C.6
Mandrus, D.G.7
Robertson, J.L.8
-
26
-
-
80052503152
-
Luminescence and X-ray absorption measurements of persistent SrAl2O4:Eu,Dy powders: Evidence for valence state changes
-
Korthout, K., Van den Eeckhout, K., Botterman, J., Nikitenko, S., Poelman, D. & Smet, P. F. Luminescence and X-ray absorption measurements of persistent SrAl2O4:Eu,Dy powders: Evidence for valence state changes. Phys. Rev. B 84, 085140-1/7 (2011).
-
(2011)
Phys. Rev. B
, vol.84
-
-
Korthout, K.1
Van Den Eeckhout, K.2
Botterman, J.3
Nikitenko, S.4
Poelman, D.5
Smet, P.F.6
-
27
-
-
79961048712
-
Magnetic state of EuN: X-ray magnetic circular dichroism at the Eu M4,5 and L2,3 absorption edges
-
Ruck, B. J., Trodahl, H. J., Richter, J. H., Cezar, J. C., Wilhelm, F., Rogalev, A., Antonov, V. N., Binh Do Le. &Meyer, C. Magnetic state of EuN: X-ray magnetic circular dichroism at the Eu M4,5 and L2,3 absorption edges. Phys. Rev. B 83, 174404-1/6 (2011).
-
(2011)
Phys. Rev. B
, vol.83
-
-
Ruck, B.J.1
Trodahl, H.J.2
Richter, J.H.3
Cezar, J.C.4
Wilhelm, F.5
Rogalev, A.6
Antonov, V.N.7
Do Le, B.8
Meyer, C.9
-
28
-
-
70350568189
-
Excitation pathways and efficiency of Eu ions in GaN by site-selective spectroscopy
-
Fleischman, Z., Munasinghe, C., Steckl, A. J., Wakahara, A., Zavada, J. & Dierolf, V. Excitation pathways and efficiency of Eu ions in GaN by site-selective spectroscopy. Appl. Phys. B 97, 607-618 (2009).
-
(2009)
Appl. Phys. B
, vol.97
, pp. 607-618
-
-
Fleischman, Z.1
Munasinghe, C.2
Steckl, A.J.3
Wakahara, A.4
Zavada, J.5
Dierolf, V.6
-
30
-
-
26744451857
-
3d X-ray-absorption lines and the 3d94f n11 multiplets of the lanthanides
-
Thole, B. T., van der Laan, G., Fuggle, J. C., Sawatzky, G. A., Karnatak, R. C. & Esteva, J. M. 3d X-ray-absorption lines and the 3d94f n11 multiplets of the lanthanides. Phys. Rev. B 32, 5107-5118 (1985).
-
(1985)
Phys. Rev. B
, vol.32
, pp. 5107-5118
-
-
Thole, B.T.1
Van Der Laan, G.2
Fuggle, J.C.3
Sawatzky, G.A.4
Karnatak, R.C.5
Esteva, J.M.6
|