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Volumn 322, Issue 9-12, 2010, Pages 1162-1166
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Gd-doped GaN studied with element specificity: Very small polarization of Ga, paramagnetism of Gd and the formation of magnetic clusters
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Author keywords
Dilute magnetic semiconductor; Magnetic property; X ray absorption spectroscopy
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Indexed keywords
DILUTE LIMIT;
DILUTE MAGNETIC SEMICONDUCTOR;
DILUTE MAGNETIC SEMICONDUCTORS;
DOPANT ATOMS;
ELEMENT SPECIFIC;
ELEMENT SPECIFICITY;
FERROMAGNETIC ORDERS;
MAGNETIC CLUSTER;
MAGNETIC ORDERS;
MAGNETIC POLARIZATIONS;
ROOM TEMPERATURE;
SQUID MEASUREMENTS;
SUB-LATTICES;
SUPERPARAMAGNETICS;
X-RAY LINEAR DICHROISMS;
X-RAY MAGNETIC CIRCULAR DICHROISM;
ABSORPTION;
CRYSTAL GROWTH;
DICHROISM;
DOPING (ADDITIVES);
FERROMAGNETIC MATERIALS;
FERROMAGNETISM;
GADOLINIUM;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
MAGNETIC PROPERTIES;
MAGNETIC RESONANCE;
MAGNETIC SEMICONDUCTORS;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
PHASE MODULATION;
PHASE SEPARATION;
POLARIZATION;
QUANTUM INTERFERENCE DEVICES;
SEMICONDUCTING ANTIMONY;
SUPERPARAMAGNETISM;
X RAY ABSORPTION;
X RAY ABSORPTION SPECTROSCOPY;
ABSORPTION SPECTROSCOPY;
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EID: 77949307528
PISSN: 03048853
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jmmm.2009.06.033 Document Type: Article |
Times cited : (20)
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References (10)
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