Unipolar to ambipolar conversion in graphene field-effect transistors

Applied Physics Letters

Volumn 101, Issue 25, 2012, Pages

  Feng, Tingting ^a   Xie, Dan ^a   Lin, Yuxuan ^a   Tian, He ^a   Zhao, Haiming ^a   Ren, Tianling ^a   Zhu, Hongwei ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AL FILMS; AL THIN FILMS; AMBIPOLAR; BACK-GATE; DEVICE FABRICATIONS; DIRAC POINT; ELECTRON CONDUCTION; INTRINSIC CHARACTERISTICS; N-TYPE DOPING; P-TYPE; TRANSFER CURVES; V-SHAPE;

CHEMICAL VAPOR DEPOSITION; FIELD EFFECT TRANSISTORS;

GRAPHENE;

EID: 84871758551     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4772493     Document Type: Article

References (22)

1. A. K. Geim and K. S. Novoselov, Nature Mater. 6, 183 (2007). 10.1038/nmat1849
2. J. H. Chen, C. Jang, S. Xiao, M. Ishigami, and M. S. Fuhrer, Nat. Nanotechnol. 3, 206 (2008). 10.1038/nnano.2008.58
3. X. Du, I. Skachko, A. Barker, and E. Y. Andrei, Nat. Nanotechnol. 3, 491 (2008). 10.1038/nnano.2008.199
4. F. Schedin, A. K. Geim, S. V. Morozov, E. W. Hill, P. Blake, M. I. Katsnelson, and K. S. Novoselov, Nature Mater. 6, 652 (2007). 10.1038/nmat1967
5. Y. M. Lin, C. Dimitrakopoulos, K. A. Jenkins, D. B. Farmer, H.Y. Chiu, A. Grill, and P. Avouris, Science 327, 662 (2010). 10.1126/science.1184289
6. L. Liao, J. W. Bai, R. Cheng, Y.-C. Lin, S. Jiang, Y. Qu, Y. Huang, and X. Duan, Nano Lett. 10, 1917 (2010). 10.1021/nl100840z
7. L. Liao, Y.-C. Lin, M. Q. Bao, R. Cheng, J. W. Bai, Y. Liu, Y. Q. Qu, K. L. Wang, Y. Huang, and X. F. Duan, Nature 467, 305 (2010). 10.1038/nature09405
8. Y. Q. Wu, Y.-M. Lin, A. A. Bol, K. A. Jenkins, F. N. Xia, D. B. Farmer, Y. Zhu, and P. Avouris, Nature 472, 74 (2011). 10.1038/nature09979
9. E. W. Hill, A. Vijayaragahvan, and K. S. Novoselov, IEEE Sens. J. 11, 3161 (2011). 10.1109/JSEN.2011.2167608
10. Y. Dan, Y. Lu, N. J. Kybert, Z. Luo, and A. T. C. Johnson, Nano Lett. 9, 1472 (2009). 10.1021/nl8033637
11. A. J. Hong, B. Song, H. S. Yu, M. J. Allen, J. Kim, J. D. Fowler, J. K. Wassei, Y. Park, Y. Wang, J. Zou, R. B. Kaner, B. H. Weiller, and K. L. Wang, ACS Nano 5, 7812 (2011). 10.1021/nn201809k
12. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, Science 306, 666 (2004). 10.1126/science.1102896
13. H. Li, Q. Zhang, C. Liu, S. Xu, and P. Gao, ACS Nano 5, 3198 (2011). 10.1021/nn200327q
14. Z. Yan, J. Yao, Z. Sun, Y. Zhu, and J. M. Tour, Small 8, 59 (2012). 10.1002/smll.201101528
15. M. A. Khaderbad, V. Tjoa, M. Rao, R. Phandripande, S. Madhu, J. Wei, M. Ravikanth, N. Mathews, S. G. Mhaisalkar, and V. R. Rao, ACS Appl. Mater. Interfaces 4, 1434 (2012). 10.1021/am201691s
16. T. Feng, D. Xie, Y. Lin, H. Zhao, Y. Chen, H. Tian, T. Ren, X. Li, Z. Li, K. Wang, D. Wu, and H. Zhu, Nanoscale 4, 2130 (2012). 10.1039/c2nr12001a
17. V. E. Dorgan, M.-H. Bae, and E. Pop, Appl. Phys. Lett. 97, 082112 (2010). 10.1063/1.3483130
18. D.-W. Shin, H. M. Lee, S. M. Yu, K.-S. Lim, J. H. Jung, M.-K. Kim, S.-W. Kim, J.-H. Han, R. S. Ruoff, and J.-B. Yoo, ACS Nano 6, 7781-7788 (2012). 10.1021/nn3017603
19. H. Sojoudi, J. Baltazar, C. Henderson, and S. Graham, J. Vac. Sci. Technol. B 30, 041213 (2012). 10.1116/1.4731472
20. A. Pirkle, J. Chan, A. Venugopal, D. Hinojos, C. W. Magnuson, S. McDonnell, L. Colombo, E. M. Vogel, R. S. Ruoff, and R. M. Wallace, Appl. Phys. Lett. 99, 122108 (2011). 10.1063/1.3643444
21. D. Nezich, A. Reina, and J. Kong, Nanotechnology 23, 015701 (2012). 10.1088/0957-4484/23/1/015701
22. G. Giovannetti, P. A. Khomyakov, G. Brocks, V. M. Karpan, J. van den Brink, and P. J. Kelly, Phys. Rev. Lett. 101, 026803 (2008). 10.1103/PhysRevLett.101.026803