Wafer-bonded p-n heterojunction of GaAs and chemomechanically polished N-polar GaN

IEEE Electron Device Letters

Volumn 34, Issue 1, 2013, Pages 42-44

  Kim, Jeonghee ^a   Toledo, Nikholas G ^a,b   Lal, Shalini ^a   Lu, Jing ^a   Buehl, Trevor E ^a,c   Mishra, Umesh K ^a  

^a University of California   (United States)

^b INTEL CORPORATION   (United States)

^c AGILENT TECHNOLOGIES   (United States)

Author keywords

Chemomechanical polishing (CMP); GaAs; N polar GaN; wafer bonding

Indexed keywords

BUILT-IN VOLTAGE; CHEMO-MECHANICAL POLISHING; COLLECTOR JUNCTIONS; FORWARD BIAS; GAAS; INTERFACE TRAPS; N-POLAR; P-N DIODE; P-N HETEROJUNCTIONS; P-N JUNCTION;

GALLIUM ARSENIDE; GALLIUM NITRIDE; HETEROJUNCTIONS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DIODES;

WAFER BONDING;

EID: 84871741260     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2225137     Document Type: Article

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