Room-temperature compressive transfer printing of nanowires for nanoelectronic devices

Langmuir

Volumn 28, Issue 51, 2012, Pages 17851-17858

  Lee, Won Seok ^a   Choi, Jun Hyeok ^b   Park, Inkyu ^a   Lee, Jihye ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Korea Institute of Machine and Materials   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AU ELECTRODES; BONDING PROCESS; CONTACT FORMATION; CONTACT PRINTING; CONTROLLED ALIGNMENT; ELECTRICAL CHARACTERISTIC; ELECTRICAL ROBUSTNESS; ELECTRONIC DEVICE; FABRICATED DEVICE; FLEXIBLE SUBSTRATE; INNOVATIVE PROCESS; INTERMEDIATE SUBSTRATES; MECHANICAL BENDING; MECHANICAL BONDING; METAL ELECTRODES; NANOELECTRONIC DEVICES; ROOM TEMPERATURE; ROOM-TEMPERATURE CONDITIONS; SCHOTTKY; SCHOTTKY BEHAVIORS; TARGET-SUBSTRATE; THERMAL ANNEALING TREATMENT; TRANSFER PRINTING; ULTRA-VIOLET;

CHROMIUM; ELECTRODES; FABRICATION; NANOELECTRONICS; NANOWIRES; OHMIC CONTACTS; ZINC OXIDE;

PRINTING;

EID: 84871578370     PISSN: 07437463     EISSN: 15205827     Source Type: Journal    
DOI: 10.1021/la3036133     Document Type: Article

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