Robustness of topological order and formation of quantum well states in topological insulators exposed to ambient environment

Proceedings of the National Academy of Sciences of the United States of America

Volumn 109, Issue 10, 2012, Pages 3694-3698

  Chen, Chaoyu ^a   He, Shaolong ^a   Weng, Hongming ^a   Zhang, Wentao ^a   Zhao, Lin ^a   Liu, Haiyun ^a   Jia, Xiaowen ^a   Mou, Daixiang ^a   Liu, Shanyu ^a   He, Junfeng ^a   Peng, Yingying ^a   Feng, Ya ^a   Xie, Zhuojin ^a   Liu, Guodong ^a   Dong, Xiaoli ^a   Zhang, Jun ^a   Wang, Xiaoyang ^b   Peng, Qinjun ^b   Wang, Zhimin ^b   Zhang, Shenjin ^b   Yang, Feng ^b   Chen, Chuangtian ^b   Xu, Zuyan ^b   Dai, Xi ^a   Fang, Zhong ^a   Zhou, X J ^a   more..

^a INSTITUTE OF PHYSICS   (China)

^b TECHNICAL INSTITUTE OF PHYSICS AND CHEMISTRY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH; BISMUTH SELENIDE; BISMUTH TELLURIDE; SELENIUM; TELLURIUM; UNCLASSIFIED DRUG;

AMBIENT AIR; ARTICLE; CHEMICAL STRUCTURE; ENGINEERING; ENVIRONMENTAL EXPOSURE; PHOTOCHEMISTRY; PRIORITY JOURNAL; QUANTUM MECHANICS; ROOM TEMPERATURE; SURFACE PROPERTY;

BISMUTH; ELECTRONS; ENVIRONMENT; LASERS; MATERIALS TESTING; PHYSICS; QUANTUM THEORY; SELENIUM; SURFACE PROPERTIES; TELLURIUM; TEMPERATURE; X-RAY DIFFRACTION;

EID: 84863286795     PISSN: 00278424     EISSN: 10916490     Source Type: Journal    
DOI: 10.1073/pnas.1115555109     Document Type: Article

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