Well-width dependence of the emission linewidth in ZnO/MgZnO quantum wells

Nanoscale Research Letters

Volumn 7, Issue , 2012, Pages 1-5

  Lv, Xue Qin ^a,d   Zhang, Jiang Yong ^a   Ying, Lei Ying ^a   Liu, Wen Jie ^a   Hu, Xiao Long ^a   Zhang, Bao Ping ^a   Qiu, Zhi Ren ^b   Kuboya, Shigeyuki ^c   Onabe, Kentaro ^c  

^a XIAMEN UNIVERSITY   (China)

^b SUN YAT SEN UNIVERSITY   (China)

^c UNIVERSITY OF TOKYO   (Japan)

^d INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Linewidth; Photoluminescence; ZnO MgZnO quantum well

Indexed keywords

BINDING ENERGY; EMISSION SPECTROSCOPY; EXCITONS; II-VI SEMICONDUCTORS; LINEWIDTH; MAGNESIUM ALLOYS; PHONON SCATTERING; PHONONS; PHOTOLUMINESCENCE; SEMICONDUCTOR ALLOYS; TEMPERATURE DISTRIBUTION; WAVE FUNCTIONS; ZINC ALLOYS; ZINC OXIDE;

EXCITON-BINDING ENERGY; LINEWIDTH BROADENING; LONGITUDINAL OPTICAL PHONONS; PHOTOLUMINESCENCE SPECTRUM; POTENTIAL VARIATIONS; SCATTERING CO-EFFICIENT; TEMPERATURE DEPENDENCE; ZNO/MGZNO;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84871023880     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-7-605     Document Type: Article

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