On thickness and annealing dependence of optical properties of Te 67.5 Ga2.5 As30 thin film as optoelectronic material

Journal of Alloys and Compounds

Volumn 551, Issue , 2013, Pages 562-567

  Abd Elrahman, Mostafa I ^a   Hafiz, Mohmed M ^a  

^a Assiut University   (Egypt)

Author keywords

Chalcogenides; Optical properties; Refractive index; Thermal annealing; Thin film; Transmission spectra

Indexed keywords

ABSORPTION MECHANISMS; ANNEALING TEMPERATURES; CRYSTALLINE PHASIS; HIGH-FREQUENCY DIELECTRICS; OPTICAL ENERGY GAP; OPTOELECTRONIC MATERIALS; REFLECTION SPECTRA; THERMAL-ANNEALING; TRANSMISSION SPECTRUMS;

ANNEALING; CHALCOGENIDES; FILM THICKNESS; GALLIUM; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; REFRACTIVE INDEX; THIN FILMS; X RAY DIFFRACTION;

FILM PREPARATION;

EID: 84871014723     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2012.11.001     Document Type: Article

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