Crystallization behavior of e-beam evaporated Ga5Ge 15Te80 thin films

Journal of Non-Crystalline Solids

Volumn 357, Issue 16-17, 2011, Pages 3226-3229

  El Gendy, Y A ^a   Sakr, G B ^b  

^a Helwan University   (Egypt)

^b Ain Shams University   (Egypt)

Author keywords

Electrical properties; Optical properties; Thin films

Indexed keywords

ANNEALED FILMS; ANNEALING TEMPERATURES; CHEMICAL COMPOSITIONS; CRYSTALLIZATION BEHAVIOR; CRYSTALLIZATION PROCESS; DEPOSITED FILMS; E BEAM EVAPORATION; ELECTRICAL CONDUCTIVITY; ENERGY DISPERSIVE X-RAY SPECTROMETRY; HEATING CYCLES; PHASE TRANSFORMATION; REFLECTANCE SPECTRUM; TEMPERATURE RANGE; TRANSMISSION ELECTRON MICROSCOPE; UPWARD TREND;

CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; GALLIUM; GERMANIUM; HEATING; OPTICAL PROPERTIES; PHASE TRANSITIONS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

OPTICAL FILMS;

EID: 79959766427     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2011.05.013     Document Type: Article

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