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Journal of Applied Physics

Volumn 112, Issue 10, 2012, Pages

Studies on temperature dependent semiconductor to metal transitions in ZnO thin films sparsely doped with Al

(7) Das, Amit K a Misra, P a Ajimsha, R S a Bose, A a Joshi, S C a Phase, D M b Kukreja, L M a

a RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY (India)

b UGC DAE CONSORTIUM FOR SCIENTIFIC RESEARCH (India)

Author keywords

[No Author keywords available]

Indexed keywords

AL-CONCENTRATION; CONCENTRATION RANGES; DOPED ZNO; IONIC IMPURITY; METALLIC BEHAVIORS; SAPPHIRE SUBSTRATES; SEMICONDUCTOR-TO-METAL TRANSITIONS; TEMPERATURE DEPENDENT; THEORETICAL MODELS; THERMAL ACTIVATION; X-RAY PHOTO; ZNO; ZNO THIN FILM;

ALUMINA; ELECTRON SPECTROSCOPY; GRAIN BOUNDARIES; METALLIC FILMS; OPTICAL FILMS; PULSED LASER DEPOSITION; SAPPHIRE; ZINC OXIDE;

ALUMINUM;

EID: 84870708332 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4765733 Document Type: Article

Times cited : (30)

References (28)

1
- 34248212800
- 10.1002/cphc.200700002
- C. Klingshirn, Chem. Phys. Chem. 8, 782 (2007). 10.1002/cphc.200700002
- (2007) Chem. Phys. Chem. , vol.8 , pp. 782
- Klingshirn, C.¹

2
- 25144462707
- 10.1063/1.1992666
- Ü. Özgür, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doǧan, V. Avrutin, S.-J. Cho, and H. Morkoç, J. Appl. Phys. 98, 041301 (2005). 10.1063/1.1992666
- (2005) J. Appl. Phys. , vol.98 , pp. 041301
- Özgür, Ü.¹ Alivov, Ya.I.² Liu, C.³ Teke, A.⁴ Reshchikov, M.A.⁵ Doǧan, S.⁶ Avrutin, V.⁷ Cho, S.-J.⁸ Morkoç, H.⁹

3
- 0021428475
- 10.1143/JJAP.23.L280
- T. Minami, H. Nanto, and S. Takata, Jpn. J. Appl. Phys., Part 2 23, L280-L282 (1984). 10.1143/JJAP.23.L280
- (1984) Jpn. J. Appl. Phys., Part 2 , vol.23
- Minami, T.¹ Nanto, H.² Takata, S.³

4
- 0026238462
- 10.1016/0040-6090(91)90067-8
- A. Sarkar, S. Ghosh, S. Chaudhuri, and A. K. Pal, Thin Solid Films 204, 255-264 (1991). 10.1016/0040-6090(91)90067-8
- (1991) Thin Solid Films , vol.204 , pp. 255-264
- Sarkar, A.¹ Ghosh, S.² Chaudhuri, S.³ Pal, A.K.⁴

5
- 34047266185
- 10.1063/1.2719158
- J. Steinhauser, S. Fa, N. Oliveira, E. Vallat-Sauvain, and C. Ballif, Appl. Phys. Lett. 90, 142107 (2007). 10.1063/1.2719158
- (2007) Appl. Phys. Lett. , vol.90 , pp. 142107
- Steinhauser, J.¹ Fa, S.² Oliveira, N.³ Vallat-Sauvain, E.⁴ Ballif, C.⁵

6
- 33747362897
- 10.1063/1.2218466
- V. Bhosle, A. Tiwari, and J. Narayan, J. Appl. Phys. 100, 033713 (2006). 10.1063/1.2218466
- (2006) J. Appl. Phys. , vol.100 , pp. 033713
- Bhosle, V.¹ Tiwari, A.² Narayan, J.³

7
- 70349154683
- 10.1088/0022-3727/42/16/165405
- A. K. Das, P. Misra, and L. M. Kukreja, J. Phys. D: Appl. Phys. 42, 165405 (2009). 10.1088/0022-3727/42/16/165405
- (2009) J. Phys. D: Appl. Phys. , vol.42 , pp. 165405
- Das, A.K.¹ Misra, P.² Kukreja, L.M.³

8
- 0032668988
- 10.1016/S0040-6090(99)00186-8
- M. L. Addonizio, A. Antonaia, G. Cantele, and C. Privato, Thin Solid Films 349, 93-99 (1999). 10.1016/S0040-6090(99)00186-8
- (1999) Thin Solid Films , vol.349 , pp. 93-99
- Addonizio, M.L.¹ Antonaia, A.² Cantele, G.³ Privato, C.⁴

9
- 0032679469
- 10.1143/JJAP.38.3682
- T. Tsurumi, S. Nishizawa, N. Ohashi, and T. Ohgaki, Jpn. J. Appl. Phys., Part 1 38, 3682-3688 (1999). 10.1143/JJAP.38.3682
- (1999) Jpn. J. Appl. Phys., Part 1 , vol.38 , pp. 3682-3688
- Tsurumi, T.¹ Nishizawa, S.² Ohashi, N.³ Ohgaki, T.⁴

10
- 34547300059
- 10.1063/1.2749836
- O. Bamiduro, H. Mustafa, R. Mundle, R. B. Konda, and A. K. Pradhan, Appl. Phys. Lett. 90, 252108 (2007). 10.1063/1.2749836
- (2007) Appl. Phys. Lett. , vol.90 , pp. 252108
- Bamiduro, O.¹ Mustafa, H.² Mundle, R.³ Konda, R.B.⁴ Pradhan, A.K.⁵

11
- 51849166856
- 10.1088/0268-1242/23/8/085019
- C. Fournier, O. Bamiduro, H. Mustafa, R. Mundle, R. B. Konda, F. Williams, and A. K. Pradhan, Semicond. Sci. Technol. 23, 085019 (2008). 10.1088/0268-1242/23/8/085019
- (2008) Semicond. Sci. Technol. , vol.23 , pp. 085019
- Fournier, C.¹ Bamiduro, O.² Mustafa, H.³ Mundle, R.⁴ Konda, R.B.⁵ Williams, F.⁶ Pradhan, A.K.⁷

12
- 79951674028
- 10.1016/j.matchemphys.2010.12.026
- H. Li, H. Qiu, M. Yu, and X. Chen, Mater. Chem. Phys. 126, 866-872 (2011). 10.1016/j.matchemphys.2010.12.026
- (2011) Mater. Chem. Phys. , vol.126 , pp. 866-872
- Li, H.¹ Qiu, H.² Yu, M.³ Chen, X.⁴

13
- 34547512198
- Pulsed laser deposition of nanostructured semiconductor
- in, edited by K. Ariga and H. S. Nalwa (American Scientific, California)
- L. M. Kukreja, P. Misra, and B. N. Singh, Pulsed laser deposition of nanostructured semiconductor., in Bottom-Up Nanofabrication: Supramolecules, Self-Assemblies and Organized Films, edited by, K. Ariga, and, H. S. Nalwa, (American Scientific, California, 2009), pp. 235-274.
- (2009) Bottom-Up Nanofabrication: Supramolecules, Self-Assemblies and Organized Films , pp. 235-274
- Kukreja, L.M.¹ Misra, P.² Singh, B.N.³

14
- 0742268555
- 10.1007/s00339-003-2296-0
- P. Misra, P. K. Sahoo, P. Tripathi, V. N. Kulkarni, R. V. Nandedkar, and L. M. Kukreja, Appl. Phys. A 78, 37 (2004). 10.1007/s00339-003-2296-0
- (2004) Appl. Phys. A , vol.78 , pp. 37
- Misra, P.¹ Sahoo, P.K.² Tripathi, P.³ Kulkarni, V.N.⁴ Nandedkar, R.V.⁵ Kukreja, L.M.⁶

15
- 33646202250
- 10.1103/PhysRev.93.632
- E. Burstein, Phys. Rev. 93, 632-633 (1954). 10.1103/PhysRev.93.632
- (1954) Phys. Rev. , vol.93 , pp. 632-633
- Burstein, E.¹

16
- 36048937855
- 10.1088/0370-1301/67/10/306
- T. S. Moss, Proc. Phys. Soc. London, Sect. B 67, 775 (1954). 10.1088/0370-1301/67/10/306
- (1954) Proc. Phys. Soc. London, Sect. B , vol.67 , pp. 775
- Moss, T.S.¹

17
- 0026157083
- 10.1016/0038-1101(91)90149-S
- S. C. Jain and D. J. Roulston, Solid-State Electron. 34, 453-465 (1991). 10.1016/0038-1101(91)90149-S
- (1991) Solid-State Electron. , vol.34 , pp. 453-465
- Jain, S.C.¹ Roulston, D.J.²

18
- 84864152778
- 10.1063/1.4730774
- L. M. Kukreja, P. Misra, J. Fallert, D. M. Phase, and H. Kalt, J. Appl. Phys. 112, 013525 (2012). 10.1063/1.4730774
- (2012) J. Appl. Phys. , vol.112 , pp. 013525
- Kukreja, L.M.¹ Misra, P.² Fallert, J.³ Phase, D.M.⁴ Kalt, H.⁵

19
- 33746791880
- 10.1063/1.2209884
- Y.-G. Wang, N. Ohashi, Y. Wada, I. Sakaguchi, T. Ohgaki, and H. Haneda, J. Appl. Phys. 100, 023524 (2006). 10.1063/1.2209884
- (2006) J. Appl. Phys. , vol.100 , pp. 023524
- Wang, Y.-G.¹ Ohashi, N.² Wada, Y.³ Sakaguchi, I.⁴ Ohgaki, T.⁵ Haneda, H.⁶

20
- 0033726952
- 10.1016/S0169-4332(99)00601-7
- M. Chen, X. Wang, Y. H. Yu, Z. L. Pei, X. D. Bai, C. Sun, R. F. Huang, and L. S. Wen, Appl. Surf. Sci. 158, 134 (2000). 10.1016/S0169-4332(99)00601-7
- (2000) Appl. Surf. Sci. , vol.158 , pp. 134
- Chen, M.¹ Wang, X.² Yu, Y.H.³ Pei, Z.L.⁴ Bai, X.D.⁵ Sun, C.⁶ Huang, R.F.⁷ Wen, L.S.⁸

21
- 0030145375
- 10.1007/BF01567122
- D. H. Zhang and H. L. Ma, Appl. Phys. A 62, 487-492 (1996). 10.1007/BF01567122
- (1996) Appl. Phys. A , vol.62 , pp. 487-492
- Zhang, D.H.¹ Ma, H.L.²

22
- 0035477928
- 10.1063/1.1398070
- Z. L. Pei, C. Sun, M. H. Tan, J. Q. Xiao, D. H. Guan, R. F. Huang, and L. S. Wen, J. Appl. Phys. 90, 3432 (2001). 10.1063/1.1398070
- (2001) J. Appl. Phys. , vol.90 , pp. 3432
- Pei, Z.L.¹ Sun, C.² Tan, M.H.³ Xiao, J.Q.⁴ Guan, D.H.⁵ Huang, R.F.⁶ Wen, L.S.⁷

23
- 34247881953
- 10.1063/1.2721374
- J. G. Lu, J Appl. Phys. 101, 083705 (2007). 10.1063/1.2721374
- (2007) J Appl. Phys. , vol.101 , pp. 083705
- Lu, J.G.¹

24
- 0003008444
- 10.1016/0038-1101(69)90117-8
- C. R. Crowell and V. Rideout, Solid-State Electron. 12, 89 (1969). 10.1016/0038-1101(69)90117-8
- (1969) Solid-State Electron. , vol.12 , pp. 89
- Crowell, C.R.¹ Rideout, V.²

25
- 34250869761
- 10.1016/j.solmat.2007.04.022
- S. Y. Myong, J. Steinhauser, R. Schlüchter, S. Fay, E. Vallat-Sauvain, A. Shah, C. Ballif, and A. Rüfenacht, Sol. Energy Mater. Sol. Cells 91, 1269-1274 (2007). 10.1016/j.solmat.2007.04.022
- (2007) Sol. Energy Mater. Sol. Cells , vol.91 , pp. 1269-1274
- Myong, S.Y.¹ Steinhauser, J.² Schlüchter, R.³ Fay, S.⁴ Vallat-Sauvain, E.⁵ Shah, A.⁶ Ballif, C.⁷ Rüfenacht, A.⁸

26
- 0004032707
- (Taylor and Francis, London).
- N. F. Mott, Metal-Insulator Transition (Taylor and Francis, London, 1974).
- (1974) Metal-Insulator Transition
- Mott, N.F.¹

27
- 35348871290
- 10.1063/1.2786916
- X. D. Liu, E. Y. Jiang, and Z. Q. Li, J. Appl. Phys. 102, 073708 (2007). 10.1063/1.2786916
- (2007) J. Appl. Phys. , vol.102 , pp. 073708
- Liu, X.D.¹ Jiang, E.Y.² Li, Z.Q.³

28
- 71749093936
- 10.1063/1.3259412
- M. Nistor, F. Gherendi, N. B. Mandache, C. Hebert, J. Perrière, and W. Seiler, J. Appl. Phys. 106, 103710 (2009). 10.1063/1.3259412
- (2009) J. Appl. Phys. , vol.106 , pp. 103710
- Nistor, M.¹ Gherendi, F.² Mandache, N.B.³ Hebert, C.⁴ Perrière, J.⁵ Seiler, W.⁶

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