52-75 GHz wideband low-noise amplifier in 90nm CMOS technology

Electronics Letters

Volumn 48, Issue 2, 2012, Pages 71-72

  Sananes, R ^a   Socher, E ^a  

^a TEL AVIV UNIVERSITY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

3 DB BANDWIDTH; 90NM CMOS; MINIMUM NOISE FIGURE; PEAK GAIN; SILICON AREA; SINGLE-ENDED; SOURCE DEGENERATION; WIDE-BAND; WIDEBAND LOW-NOISE AMPLIFIER;

CMOS INTEGRATED CIRCUITS; LOW NOISE AMPLIFIERS;

BROADBAND AMPLIFIERS;

EID: 84857251575     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2011.2788     Document Type: Article

References (6)

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2. Pellerano, S., Palaskas, Y., and Soumyanath, K.: ' A 64GHz LNA with 15.5dB gain and 6.5dB NF in 90nm CMOS ', IEEE J. Solid States Circuits, 2008, 43, p. 1542-1552 10.1109/JSSC.2008.922395
3. Cohen, E., Ravid, S., and Ritter, D.: ' An ultra low power LNA with 15dB gain and 4.4dB NF in 90nm CMOS process for 60GHz phase array radio ', IEEE RFIC Symp., Atlanta, GA, USA, 2008, p. 61-64
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6. Tsai, M.-D., Wang, H., Kuan, J.-F., and Chang, C.-S.: ' A 70GHz cascaded multi-stage distributed amplifier in 90nm CMOS technology ', Int. Solid-State Circuits Conf. Tech. Dig., February, 2005, p. 402-403