68-110-GHz-band low-noise amplifier using current reuse topology

IEEE Transactions on Microwave Theory and Techniques

Volumn 58, Issue 7 PART 2, 2010, Pages 1910-1916

  Sato, Masaru ^a   Takahashi, Tsuyoshi ^a   Hirose, Tatsuya ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Common gate (CG) amplifier; Current reuse; HEMT; Impedance matching; Low noise amplifier (LNA); Passive millimeter wave (PMMW) sensor

Indexed keywords

100 GHZ; BROADBAND LNA; BROADBAND PERFORMANCE; CHIP SIZES; COMMON GATES; CURRENT REUSE; DESIGN METHODOLOGY; HIGH-GAIN; IMAGERS; IMPEDANCE MATCHINGS; INP HEMT; INPUT AND OUTPUT IMPEDANCE; LOW-NOISE AMPLIFIER (LNA); LOW-POWER CONSUMPTION; MATCHING INDUCTORS; POWER CONSUMPTION; POWER DETECTORS; POWER SUPPLY VOLTAGE; SMALL SIZE; ULTRA-BROADBAND; UNIT CELLS; WIDE BANDWIDTH; WIDE FREQUENCY RANGE;

BROADBAND AMPLIFIERS; ELECTRIC INDUCTORS; ELECTRIC POWER SUPPLIES TO APPARATUS; IMPEDANCE MATCHING (ELECTRIC); MILLIMETER WAVE DEVICES; MILLIMETER WAVES; SENSORS; TOPOLOGY;

LOW NOISE AMPLIFIERS;

EID: 77954657760     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2010.2050374     Document Type: Article

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