Gain-enhanced 132-160 GHz low-noise amplifier using 0.13 μm SiGe BiCMOS

Electronics Letters

Volumn 48, Issue 5, 2012, Pages 257-259

  Zhang, Bo ^a   Xiong, Yong Zhong ^b   Wang, Lei ^d   Hu, Sangming ^c   Li, Le Wei ^d  

^a XI AN UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b Microarray Technology   (China)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

^d UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

3 DB BANDWIDTH; CHIP AREAS; DC POWER CONSUMPTION; GAIN BOOSTING TECHNIQUE; LOWER-POWER CONSUMPTION; SIGE BICMOS; SIGE BICMOS TECHNOLOGY;

BICMOS TECHNOLOGY; SEMICONDUCTING SILICON; SILICON ALLOYS;

LOW NOISE AMPLIFIERS;

EID: 84863253723     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2011.3882     Document Type: Article

References (7)

1. Chevalier, P., Barbalat, B., Laurens, M., Vandelle, B., Rubaldo, L., Geynet, B., Voinigescu, S.P., Dickson, T.O., Zerounian, N., Chouteau, S., Dutartre, D., Monroy, A., Aniel, F., Dambrine, G., and Chantre, A.: ' High-speed SiGe BiCMOS technologies: 120-nm status and end-of-roadmap challenges ', IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Long Beach, CA, USA, January, 2007, p. 18-23
2. Sze, S.M.: ' High-speed semiconductor devices ', (Wiley, New York, USA, 1990)
3. Xiong, Y.Z.: ' An on-chip transformer-based feedback CMOS power oscillator ', Electron. Lett., 2005, 41, (3), p. 135-137 10.1049/el:20057857 0013-5194
4. Huang, B.-J., Lin, K.-Y., and Wang, H.: ' Millimeter-wave low power and miniature CMOS multicascode low-noise amplifiers with noise reduction topology ', IEEE Trans. Microw. Theory Tech., 2009, 57, (12), p. 3049-3059 10.1109/TMTT.2009.2033238 0018-9480
5. Powell, J., Kim, H., and Sodini, C.G.: ' SiGe receiver front ends for millimeter-wave passive imaging ', IEEE Trans. Microw. Theory Tech., 2008, 56, (11), p. 2416-2425 10.1109/TMTT.2008.2006103 0018-9480
6. Chen, A.Y.-K., Baeyens, Y., Chen, Y.-K., and Lin, J.: ' 21dB 87GHz low-noise amplifier using 0.18m SiGe BiCMOS ', Electron. Lett., 2010, 46, (5), p. 332-333 10.1049/el.2010.0155 0013-5194
7. Sandstrom, D., Varonen, M., Karkkainen, M., and Halonen, K.A.I.: ' W-band CMOS amplifiers achieving +10dBm saturated output power and 7.5dB NF ', IEEE J. Solid-State Circuits, 2009, 44, (12), p. 3403-3409 10.1109/JSSC.2009.2032274 0018-9200