An all C60 vertical transistor for high frequency and high current density applications

Applied Physics Letters

Volumn 101, Issue 21, 2012, Pages

  Fischer, Axel ^a   Scholz, Reinhard ^a   Leo, Karl ^a   Lüssem, Björn ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DOPED LAYERS; DRIVING VOLTAGES; ELEVATED TEMPERATURE; HIGH CURRENT DENSITIES; HIGH FREQUENCY; HIGH OPERATING FREQUENCY; INVERTER CIRCUIT; ORGANIC TRANSISTOR; VERTICAL TRANSISTORS; VOLTAGE GAIN;

SEMICONDUCTOR DEVICES;

CURRENT DENSITY;

EID: 84870038682     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4767391     Document Type: Article

References (17)

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17. See supplemental material at http://dx.doi.org/10.1063/1.4767391 E-APPLAB-101-059247 for further current-voltage characteristics, determination of parameters, and fabrication details.