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Volumn 101, Issue 21, 2012, Pages

ZnO-nanorod-array/p-GaN high-performance ultra-violet light emitting devices prepared by simple solution synthesis

(8) Jha, Shrawan Kumar a Luan, Chunyan a To, Chap Hang a Kutsay, Oleksandr a Kováč Jr , Jaroslav a,b Zapien, Juan Antonio a Bello, Igor a Lee, Shuit Tong a

a CITY UNIVERSITY OF HONG KONG (Hong Kong)

b SLOVAK UNIVERSITY OF TECHNOLOGY (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS STRESS; BLUE SHIFT; CHARACTERIZATION TECHNIQUES; LIGHT EMITTING DEVICES; MATERIAL GROWTH; OPERATING VOLTAGE; PREPARATION METHOD; SOLUTION SYNTHESIS; ULTRA-VIOLET; ULTRA-VIOLET LIGHT; UV EMISSIONS; ZINC OXIDE (ZNO);

BIAS VOLTAGE; GALLIUM NITRIDE; LIGHT; LIGHT EMITTING DIODES; LUMINESCENCE; NANORODS; ZINC OXIDE;

ELECTROLUMINESCENCE;

EID: 84869996071 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4764061 Document Type: Article

Times cited : (21)

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