Integrated nanorods and heterostructure field effect transistors for gas sensing

Journal of Physical Chemistry C

Volumn 114, Issue 17, 2010, Pages 7999-8004

  Jha, Shrawan K ^a   Liu, Chao Ping ^a   Chen, Zhen Hua ^a   Chen, Kevin J ^b   Bello, Igor ^a   Zapien, Juan A ^a   Zhang, Wenjun ^a   Lee, Shuit Tong ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; BIOSENSING APPLICATIONS; FABRICATED STRUCTURES; GAS CONCENTRATION; GAS SENSING; GAS SENSORS; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; PROCESSING THE SIGNALS; SENSING PROBE; SIGNAL AMPLIFICATIONS; SURFACE-TO-VOLUME RATIO; ZNO; ZNO NANOROD;

AMPLIFICATION; GALLIUM NITRIDE; GAS DETECTORS; HIGH ELECTRON MOBILITY TRANSISTORS; NANORODS; SENSORS; SIGNAL PROCESSING; SURFACE STRUCTURE; ZINC OXIDE;

FIELD EFFECT TRANSISTORS;

EID: 77951913598     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp100461p     Document Type: Article

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