Charge losses in segmented silicon sensors at the Si-SiO2 interface

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 700, Issue , 2013, Pages 22-39

  Poehlsen, Thomas ^a   Fretwurst, Eckhart ^a   Klanner, Robert ^a   Schuwalow, Sergej ^a   Schwandt, Jörn ^a   Zhang, Jiaguo ^a  

^a UNIVERSITY OF HAMBURG   (Germany)

Author keywords

Accumulation layer; Charge losses; Humidity; Silicon sensors; TCAD simulations; Weighting field

Indexed keywords

ATMOSPHERIC HUMIDITY; CHARGED PARTICLES; SILICON; SILICON SENSORS;

ACCUMULATION LAYERS; APPLIED BIAS VOLTAGE; CHARGE LOSS; ELECTRON ACCUMULATION; ENVIRONMENTAL CONDITIONS; QUANTITATIVE DETERMINATIONS; TCAD SIMULATION; WEIGHTING FIELD;

SILICON OXIDES;

EID: 84869888285     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2012.10.063     Document Type: Article

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