Impact of plasma effects on the performance of silicon sensors at an X-ray FEL

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 615, Issue 2, 2010, Pages 230-236

  Becker, Julian ^a   Eckstein, Doris ^a   Klanner, Robert ^a   Steinbrück, Georg ^a  

^a UNIVERSITY OF HAMBURG   (Germany)

Author keywords

AGIPD; Charge explosion; Plasma effects; Silicon sensor; X rays; XFEL

Indexed keywords

APPLIED BIAS VOLTAGE; CHARGE CARRIER DENSITY; CHARGE COLLECTION; CHARGE EXPLOSION; CURRENT PULSE; ELECTRON HOLE DENSITY; ELECTRON HOLE PLASMA; MULTI-CHANNEL; PLASMA EFFECTS; SEGMENTED SENSOR; SENSOR DESIGNS; STRIP SENSORS; TIME-RESOLVED; TRANSIENT CURRENT TECHNIQUE; X-RAY FEL;

EXPLOSIONS; SILICON SENSORS;

PLASMAS;

EID: 77649273620     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2010.01.082     Document Type: Article

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