Simulation and experimental study of plasma effects in planar silicon sensors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 624, Issue 3, 2010, Pages 716-727

  Becker, Julian ^a   Grtner, Klaus ^b   Klanner, Robert ^a   Richter, Rainer ^c  

^a UNIVERSITY OF HAMBURG   (Germany)

^b WEIERSTRASS INSTITUTE FOR APPLIED ANALYSIS AND STOCHASTICS   (Germany)

^c MPI HALBLEITERLABOR   (Germany)

Author keywords

High charge carrier densities; Plasma effect; Pulse shape; Silicon sensor; Simulation

Indexed keywords

CHARGE CARRIER DENSITY; CURRENT MEASUREMENTS; CURRENT PULSE; ELECTRON HOLE PAIRS; EXPERIMENTAL STUDIES; HIGH DENSITY; LASER LIGHTS; NUMERICAL SIMULATION; PLASMA EFFECT; PLASMA EFFECTS; PULSE SHAPES; SIMULATION; SPATIAL DISTRIBUTION; TIME-RESOLVED;

CARRIER CONCENTRATION; EXCITONS;

SILICON SENSORS;

EID: 78649330085     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2010.10.010     Document Type: Article

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