Study of radiation damage induced by 12 keV X-rays in MOS structures built on high-resistivity n-type silicon

Journal of Synchrotron Radiation

Volumn 19, Issue 3, 2012, Pages 340-346

  Zhang, Jiaguo ^a   Pintilie, Ioana ^a,b   Fretwurst, Eckhart ^a   Klanner, Robert ^a   Perrey, Hanno ^a   Schwandt, Joern ^a  

^a UNIVERSITY OF HAMBURG   (Germany)

^b National Institute of Materials Physics   (Romania)

Author keywords

C G V; fixed oxide charge density; interface trap density; radiation damage; TDRC; XFEL

Indexed keywords

C/G-V; INTERFACE TRAP DENSITY; OXIDE CHARGE DENSITY; TDRC; XFEL;

FREE ELECTRON LASERS; INTERFACE STATES; MOS CAPACITORS; PHOTONS; RADIATION DAMAGE; SILICA; SILICON OXIDES; STRUCTURES (BUILT OBJECTS); X RAYS;

SEMICONDUCTING SILICON;

EID: 84860183228     PISSN: 09090495     EISSN: 16005775     Source Type: Journal    
DOI: 10.1107/S0909049512002348     Document Type: Article

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