Study of X-ray radiation damage in silicon sensors

Journal of Instrumentation

Volumn 6, Issue 11, 2011, Pages

  Zhang, J ^a   Fretwurst, E ^a   Klanner, R ^a   Perrey, H ^a   Pintilie, I ^b   Poehlsen, T ^a   Schwandt, J ^a  

^a UNIVERSITY OF HAMBURG   (Germany)

^b NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

Author keywords

Instrumentation for FEL; Radiation damage to detector materials (solid state); Solid state detectors; X ray detectors

Indexed keywords

EID: 82955225047     PISSN: None     EISSN: 17480221     Source Type: Journal    
DOI: 10.1088/1748-0221/6/11/C11013     Document Type: Article

References (10)

1. A. Akkerman et al. 2001 Updated NIEL calculations for estimating the damage induced by particles and gamma-rays in Si and GaAs, Radiat. Phys. Chem. 62 301
2. D.M. Fleetwood, M.R. Shaneyfelt and J.R. Schwank 1994 Estimating oxide-trap, interface-trap, and border-trap charge densities in MOS transistors, Appl. Phys. Lett. 64 1965
3. 2 at HERA and radiation damage studies for silicon sensors for the XFEL 2011 Ph.D. thesis Hamburg University, Hamburg, Germany [DESY-THESIS-2011-021]
4. 2 and high-κ MOS insulator, IEEE Trans. Nucl. Sci. 57 3463
5. J. Zhang et al. Study of radiation damage induced by 12 keV X-rays in MOS structures built on high resistivity n-type silicon, submitted to J. Synchrotron Rad., arXiv:1107.5949
6. J.G. Simmons and G.W. Taylor 1972 High-field isothermal currents and thermally stimulated currents in insulators having discrete trapping levels, Phys. Rev. B 5 1619
7. H.A. Mar and J.G. Simmons 1974 Determination of the energy distribution of interface traps in MIS system using non-steady-state techniques, Solid State Electron. 17 131
8. H.A. Mar and J.G. Simmons 1973 Surface-generation statistics and associated currents in metal-oxide-semiconductor structures, Phys. Rev. B 11 775
9. E.H. Nicollian and J.R. Brews 1982 MOS (Metal Oxide Semiconductor) physics and technology (John Wiley) Inc., New York U.S.A.
10. J. Schwandt 2011 Optimization of silicon pixel sensors for the high X-ray doses of the European XFEL, talk at the 9th International Conference on Position Sensitive Detectors, September 12-16, Aberystwyth University, U.K., submitted to JINST