Low power ReRAM with Fab-friendly materials through PVD morphology and stoichiometry control

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 2011, Pages 104-105

  Otani, Yuichi ^b   Gilmer, David C ^a   Park, Hokyung ^a   Junko, Ono ^b   Yamaguchi, Nobuo ^b   Nakagawa, Takashi ^b   Kirsch, Paul D ^a   Jammy, Raj ^a  

^a Canon ANELVA Corporation ^*  (Japan)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE STRUCTURE; DEPOSITION PARAMETERS; DEVICE PERFORMANCE; LOW POWER; MEMORY WINDOW; OPERATING VOLTAGE; RESET CURRENTS; RESISTANCE SWITCHING; STOICHIOMETRY CONTROL; SWITCHING DEVICES; TRANSITION-METAL OXIDES;

PHYSICAL VAPOR DEPOSITION; STOICHIOMETRY; SURFACE STRUCTURE; TITANIUM NITRIDE; TRANSITION METALS;

MORPHOLOGY;

EID: 79959941641     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2011.5872250     Document Type: Conference Paper

References (6)

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2. Baek, I.G., et al., "Highly Scalable Nonvolatile Resistive Memory using Simple Binary Oxide...", IEDM (2004).
3. Wei, Z., et al., "Highly Reliable TaOx ReRAM..", IEDM (2008).
4. Chen, P.-S., et al., "Improved Bipolar Resistive Switching...with a Reactive Metal Layer", Jpn. J. Appl. Phys. (2010).
5. Lai, E-K., et al., "Tungsten Oxide Resistive Memory..", Jpn. J. Appl. Phys. (2010).
6. Fritze, M., SEMATECH Workshop on Emerging Tech. in Solid State, Baltimore (2009).