Optical modeling of the internal back reflectance of various c-Si dielectric stacks featuring AlOx, SiNx, TiO2 and SiO2

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2012, Pages 1032-1035

  Davis, K O ^a,b   Seigneur, H P ^a   Jiang, K ^c   Demberger, C ^c   Zunft, H ^c   Haverkamp, H ^c   Habermann, D ^c   Schoenfeld, W V ^a,b  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b UNIVERSITY OF CENTRAL FLORIDA   (United States)

^c Gebr Schmid GmbH and Co   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM OXIDES; BACK REFLECTANCE; CRYSTALLINE SILICONS; DIELECTRIC STACK; HIGH QUALITY; HIGH-VOLUME MANUFACTURING; INTERNAL ANGLES; OPTICAL MODELING; OPTICAL PATH LENGTHS; PHOTOVOLTAICS; REAR SIDE; REDUCED COST; STACK CONFIGURATIONS; SURFACE PASSIVATION; SURFACE RECOMBINATIONS; SURFACE REFLECTANCE; THIN WAFERS; TIO;

INTERFACES (MATERIALS); PASSIVATION; REFLECTION; SILICA; SILICON; SILICON NITRIDE; SILICON OXIDES; TITANIUM DIOXIDE;

SILICON WAFERS;

EID: 84869442909     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2012.6317779     Document Type: Conference Paper

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