Vapor-liquid-solid growth of endotaxial semiconductor nanowires

Nano Letters

Volumn 12, Issue 11, 2012, Pages 5565-5570

  Li, Shaozhou ^a   Huang, Xiao ^a   Liu, Qing ^a   Cao, Xiehong ^a   Huo, Fengwei ^a   Zhang, Hua ^a   Gan, Chee Lip ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

endotaxial; epitaxial; nanostructures; SiGe; Vapor liquid solid growth

Indexed keywords

ENDOTAXIAL; EPITAXIAL; GROWTH CONDITIONS; SEMICONDUCTOR NANOWIRE; SIGE; SILICON SUBSTRATES; SILICON SURFACES; SPATIAL CONTROL; VAPOR-LIQUID-SOLID GROWTH; VAPOR-LIQUID-SOLID PROCESS;

GERMANIUM; LIQUIDS; NANOSTRUCTURES; NANOWIRES; SILICON ALLOYS; SILICON OXIDES; VAPORS;

SEMICONDUCTOR GROWTH;

GERMANIUM; NANOMATERIAL; NANOTUBE; NANOWIRE; SILICON DIOXIDE;

ARTICLE; CATALYSIS; CHEMISTRY; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR; SURFACE PROPERTY; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY;

CATALYSIS; GERMANIUM; MICROSCOPY, ELECTRON, SCANNING; MICROSCOPY, ELECTRON, TRANSMISSION; NANOSTRUCTURES; NANOTECHNOLOGY; NANOTUBES; NANOWIRES; PARTICLE SIZE; SEMICONDUCTORS; SILICON DIOXIDE; SURFACE PROPERTIES; TEMPERATURE;

EID: 84869162987     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl3025196     Document Type: Article

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