Characterization of Cu(In,Ga)Se 2 solar cell fabrication process by photoluminescence

Japanese Journal of Applied Physics

Volumn 51, Issue 10 PART 2, 2012, Pages

  Shirakata, Sho ^a   Ohta, Hiroyuki ^a   Iwado, Naoki ^a  

^a EHIME UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AL-DOPED ZNO; CDS; CELL PROCESS; CHEMICAL-BATH DEPOSITION; CIGS FILMS; CU(IN , GA)SE; DECAY COMPONENTS; DECAY CURVES; DECAY TIME; ELECTRICAL CELLS; JUNCTION FORMATION; MECHANICAL SCRIBING; OPEN CIRCUIT CONDITIONS; PL INTENSITY; RF-MAGNETRON SPUTTERING; SINGLE EXPONENTIAL CURVES; SOLAR CELL FABRICATION PROCESS; SOLAR CELL PERFORMANCE; TIME-RESOLVED; ZNO; ZNO BUFFER LAYER; ZNO:AL FILMS;

ALUMINUM; CADMIUM COMPOUNDS; CADMIUM SULFIDE; DEPOSITS; GALLIUM; MAGNETRON SPUTTERING; PHOTOLUMINESCENCE; SOLAR CELLS; ZINC OXIDE;

DECAY (ORGANIC);

EID: 84869140813     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.10NC13     Document Type: Article

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