The effect of post-growth thermal annealing on the emission spectra of GaAs/AlGaAs quantum dots grown by droplet epitaxy

Physica Status Solidi - Rapid Research Letters

Volumn 6, Issue 11, 2012, Pages 445-447

  Moon, Pilkyung ^a   Lee, J D ^b   Ha, S K ^c   Lee, E H ^c   Choi, W J ^c   Song, J D ^c   Kim, J S ^d   Dang, L S ^e  

^a TOHOKU UNIVERSITY   (Japan)

^b Daegu Gyeongbuk Institute of Science and Technology   (South Korea)

^c Korea Institute of Science and Technology   (South Korea)

^d Yeungnam University   (South Korea)

^e CEA GRENOBLE   (France)

Author keywords

AlGaAs; Annealing; Droplet epitaxy; GaAs; Luminescence; Quantum dots

Indexed keywords

ALGAAS; DROPLET EPITAXY; EMISSION ENERGIES; EMISSION SPECTRUMS; GAAS; GAAS/ALGAAS; OPTICAL ACTIVATION; PEAK SHIFT; POSTGROWTH THERMAL ANNEALING; SCANNING TRANSMISSION ELECTRON MICROSCOPY; THERMAL-ANNEALING;

ALUMINUM GALLIUM ARSENIDE; DROPS; EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; LUMINESCENCE; OPTICAL PROPERTIES; SEMICONDUCTOR QUANTUM DOTS; SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY;

ANNEALING;

EID: 84869126850     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201206369     Document Type: Article

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