Step annealing effects on the structural and optical properties of InAs quantum dots grown on GaAs

Journal of Crystal Growth

Volumn 300, Issue 2, 2007, Pages 319-323

  Park, Ho Jin ^a   Kim, Jong Ho ^a   Yoon, J J ^a   Son, J S ^b   Lee, D Y ^c   Ryu, H H ^a   Jeon, Minhyon ^a   Leem, J Y ^a  

^a Inje University   (South Korea)

^b Kyungwoon University   (South Korea)

^c Samsung Electro Mechanics   (South Korea)

Author keywords

A1. Annealing effect; A1. Photoluminescence; A1. Transmission electron microscopy; A3. Molecular beam epitaxy; A3. Quantum dots

Indexed keywords

INDIUM ARSENIDE; LINEWIDTH; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

ANNEALING EFFECTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33947171122     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.337     Document Type: Article

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