Effect of the low-temperature annealing on Zn-doped indium-tin-oxide films for silicon heterojunction solar cells

Japanese Journal of Applied Physics

Volumn 51, Issue 10 PART 2, 2012, Pages

  Lee, Seunghun ^a   Lee, Jong Han ^a   Tark, Sung Ju ^a   Choi, Suyoung ^a   Kim, Chan Seok ^a   Lee, Jeong Chul ^b   Kim, Won Mok ^c   Kim, Donghwan ^a  

^a Korea University   (South Korea)

^b Korea Institute of Energy Research (KIER)   (South Korea)

^c Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AL-DOPED ZNO; ATOMIC RATIO; CARRIER COMPENSATION; CORNING GLASS; ELECTRICAL , OPTICAL AND STRUCTURAL PROPERTIES; IN-VACUUM; INDIUM TIN OXIDE; INTERSTITIAL SITES; ITO FILMS; LOW TEMPERATURE ANNEALING; RF-MAGNETRON SPUTTERING; ROOM TEMPERATURE; SILICON HETEROJUNCTIONS; SURFACE FILMS;

ANNEALING; CARRIER CONCENTRATION; ELECTRIC PROPERTIES; HALL MOBILITY; HETEROJUNCTIONS; INDIUM; ITO GLASS; MAGNETRON SPUTTERING; OXIDE FILMS; TEMPERATURE; TIN; ZINC OXIDE;

ZINC;

EID: 84869115405     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.10NA16     Document Type: Article

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