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Japanese Journal of Applied Physics

Volumn 51, Issue 10 PART 2, 2012, Pages

Mapping characterization of SnO 2:F transparent conductive oxide layers by ellipsometry technique

(2) Sago, Yuichiro a Fujiwara, Hiroyuki a

a GIFU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; DRUDE MODELS; FREE CARRIER ABSORPTION; HYDROGENATED AMORPHOUS SILICON (A-SI:H); INHOMOGENEITIES; LAYER THICKNESS; NON-UNIFORMITIES; OPTICAL ADMITTANCE; OPTOELECTRONIC PROPERTIES; TANDEM SOLAR CELLS; TRANSPARENT CONDUCTIVE OXIDES;

CARRIER CONCENTRATION; CARRIER MOBILITY; F REGION; SPECTROSCOPIC ELLIPSOMETRY;

SILICON;

EID: 84869104179 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.51.10NB01 Document Type: Article

Times cited : (11)

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