Graphene nanoribbon tunneling field effect transistors

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 46, Issue , 2012, Pages 270-273

  Mohamadpour, Hakimeh ^a,b   Asgari, Asghar ^c,d  

^a AZARBAIJAN SHAHID MADANI UNIVERSITY   (Iran)

^b INSTITUTE FOR ADVANCED STUDIES IN BASIC SCIENCES IASBS   (Iran)

^c UNIVERSITY OF TABRIZ   (Iran)

^d UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STATE; CURRENT BEHAVIORS; DISCRETE DENSITIES; ELECTRON HOLE SYMMETRY; GATE VOLTAGES; GRAPHENE NANO-RIBBON; GRAPHENE NANORIBBONS; I-V BEHAVIOR; NEGATIVE DIFFERENTIAL RESISTANCES; NON-EQUILIBRIUM GREEN'S FUNCTION FORMALISM; OSCILLATORY DEPENDENCE; P-TYPE; RESONANT TUNNELING TRANSISTORS; SHORT CHANNELS; SOURCE AND DRAINS; SUB-THRESHOLD CURRENT; THIN BARRIERS; TUNNELING FIELD-EFFECT TRANSISTORS;

FIELD EFFECT TRANSISTORS;

GRAPHENE;

EID: 84869092606     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2012.09.021     Document Type: Article

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