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Solid State Communications

Volumn 152, Issue 22, 2012, Pages 2036-2039

Bipolar resistive switching in BiFe 0.95Mn 0.05O 3 films

(5) Xu, Qingyu a,b Yuan, Xueyong a Cao, Yanqiang c Si, Lifang a Wu, Di c

a SOUTHEAST UNIVERSITY (China)

b Southeast University (China)

c NANJING UNIVERSITY (China)

Author keywords

A. Ferroelectrics; A. Magnetic films and multilayers; B. Laser processing; D. Electronic transport

Indexed keywords

AG ELECTRODE; BIFE; CONDUCTING FILAMENT; CONDUCTION MECHANISM; ELECTRONIC TRANSPORT; HIGH-RESISTANCE STATE; LASER PROCESS; LOW-RESISTANCE STATE; MAGNETIC FILMS AND MULTILAYERS; MODEL-BASED OPC; RESISTANCE RATIO; RESISTIVE SWITCHING; SI SUBSTRATES; SPACE-CHARGE-LIMITED CURRENT;

FILM PREPARATION; LASERS; MANGANESE; PULSED LASER DEPOSITION; SWITCHING SYSTEMS;

SILVER;

EID: 84869087872 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/j.ssc.2012.08.023 Document Type: Article

Times cited : (3)

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