Reactive magnetron sputtering of piezoelectric Cr-doped AlN thin films

IEEE International Ultrasonics Symposium, IUS

Volumn , Issue , 2011, Pages 835-839

  Felmetsger, V V ^a   Mikhov, M K ^a  

^a OEM Group Incorporated   (United States)

Author keywords

AlN; crystal orientation; doped aluminum nitride; reactive magnetron sputtering; stress

Indexed keywords

ALLOY TARGET; ALN; ALN FILMS; ALN THIN FILMS; AR GAS PRESSURE; CR-DOPED; CRYSTALLINE GRAINS; DEPOSITION PROCESS; ELECTROMECHANICAL COUPLING COEFFICIENTS; FILM MICROSTRUCTURES; MATERIAL PROPERTY; MULTI-STEP; NANO-SIZE GRAINS; PIEZOELECTRIC ACTIVITY; PIEZOELECTRIC RESPONSE; PRELIMINARY ASSESSMENT; QUALITY FACTORS; REACTIVE MAGNETRON SPUTTERING; SMR-BAW; STRESS CONTROL; STRUCTURAL FEATURE;

ALUMINUM NITRIDE; CHROMIUM ALLOYS; CRYSTAL ORIENTATION; ELECTROMECHANICAL COUPLING; ION BOMBARDMENT; MAGNETRON SPUTTERING; PIEZOELECTRICITY; PLATINUM; STRESSES; SURFACE ROUGHNESS; TEXTURES;

FILMS;

EID: 84869054410     PISSN: 19485719     EISSN: 19485727     Source Type: Conference Proceeding    
DOI: 10.1109/ULTSYM.2011.0204     Document Type: Conference Paper

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