The changing of initial state in a strong electric field and memory effect in chalcogenides

Journal of Optoelectronics and Advanced Materials

Volumn 9, Issue 10, 2007, Pages 3035-3038

  Tsendin, K D ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

Chalcogenides; Memory effect; Non linear current voltage characteristic

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELDS; GLASS; GLASS TRANSITION;

CHALCOGENIDE GLASSY SEMICONDUCTORS; CRYSTAL PHASE TRANSITION; CURRENT FILAMENTS; INFORMATION RECORDING; MEMORY EFFECTS; NEGATIVE-U CENTERS; NON-LINEAR CURRENT-VOLTAGE CHARACTERISTICS; STRONG ELECTRIC FIELDS;

CHALCOGENIDES;

EID: 38549158632     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (24)

1. N. A. Gorunova, B. T. Kolomiets, Zum. Techn. Fiz. (in Russian), 25, 984 (1955).
2. N A. Gorunova, B. T. Kolomiets Zurn. Techn. Fiz. (in Russian), 25, 2069 (1955).
3. "Electronic Phenomena in chalcogenide glassy semiconductors" Edited by K. D. Tsendin, Science, (in Russian), St. Petersburg, (1996).
4. "Insulating and Semiconducting Glasses" Edited by P. Boolchand, World Scientific Publishing Co. Inc., NJ (2000).
5. "Non-crystalline Chalcogenides", M. A. Popescu, Kluwer Academic Publishers, (2000).
6. "Semiconducting Chalcogenide Glasses" Edited by R. Faiman and B. Ushkov, Elsevier Science (2005).
7. "Photo-induced Metastability in Amorphous Semiconductors" Edited by A. V. Kolobov, Willey-VCH, Berlin (2003).
8. B. T. Kolomiets, E. A. Lebedev, Radiotehnika i elektronika (in Russian), 8, 2037 (1963).
9. S. R. Ovshinsky, Phys. Rev. Letters 21, 1450 (1968).
10. D. Adler, M. S. Shur, M. Silver, S. R. Ovshinsky, J. Appl. Phys. 51, 3289 (1980).
11. K. E. Petersen, D. Adler, J. Appl. Phys. 47, 256 (1976).
12. A. Pirovano, A. L. Lacaita, A. Benvenuti, F. Pellizzer, R. Bez, IEEE Trans. Electron. Devices, 51, 452 (2004).
13. A. Pirovano, A. L. Lacaita, F. Pellizzer, S. A. Kostylev, A. Benvenuti, R. Bez, IEEE Trans. Electron. Devices 51, 714 (2004).
14. B. L. Gelmont, K. D. Tsendin, Sov. Phys. Semicond. 10, 665 (1976).
15. K. D. Tsendin, E. A. Lebedev, B. L. Gelmont, B. T. Kolomiets, Proceed. Intern. Conf. "Amorphous Semiconductors '76" Balatonfured, Hungary. Akademiai Kiado, Budapest 1977 pp. 13-18.
16. B. T. Kolomiets, E. A. Lebedev, K. D. Tsendin, Sov. Phys. Semicond. 15, 175 (1981).
17. B. T. Kolomiets, E. A. Lebedev, I. A. Taksami, K. D. Tsendin, Semicond. 17, 75 (1983).
18. E. A. Lebedev, K. D. Tsendin, Semiconductors 32, 838 (1998).
19. E. A. Lebedev, K. D. Tsendin, L. P. Kazakova. Semiconductors 34, 95 (2000).
20. V. N. Abakumov, V. I. Perel, I. N. Yassievich
21. P. J. Walsh, J. E. Hall, R. Nicolaides, S. Defeo, P. Calella, J. Kuchmas, W. Doremus, J. Non-Cryst. Sol. 2, 107 (1970).
22. T. Kato, K. Tanaka, Jap J. Appl. Phys. 44, 7340 (2005).
23. D. Strand, J. Optoelectron. Adv. Mater. 7(4), 1679 (2005).
24. C. S. Steimer, W. Welnic, J. Kalb, M. Wutting, J. Optoelectron. Adv. Mater. 8(6), 2044 (2006).