Metal-oxides hole injection/extraction layer in organic semiconductor devices

ECS Transactions

Volumn 35, Issue 19, 2011, Pages 11-22

  Irfan, ^a   Gao, Yongli ^a  

^a UNIVERSITY OF ROCHESTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDBENDING; COUNTER-INTUITIVE PHENOMENON; ELECTRONIC ENERGY LEVELS; HIGHEST OCCUPIED MOLECULAR ORBITAL; HOLE INJECTION; HOLE TRANSPORT LAYERS; INVERSE PHOTOEMISSION SPECTROSCOPY; METAL OXIDE LAYERS; METAL OXIDES; ULTRAVIOLET PHOTOEMISSION; X-RAY PHOTOEMISSIONS;

ELECTRIC FIELDS; ELECTRON ENERGY LEVELS; METALLIC COMPOUNDS; MOLYBDENUM OXIDE; SEMICONDUCTOR MATERIALS;

SEMICONDUCTOR DEVICES;

EID: 84868683068     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3641392     Document Type: Conference Paper

References (31)

1. C. W. Tang, Appl. Phys. Lett. 48, 183 (1986).
2. P. Peumans, S. Uchida and S. R. Forrest, Nature, 425, 158 (2003).
3. G. Yu, J. Gao, J. C. Hummelen, F. Wudl, and A. J. Heager, Science 270, 1789 (1995).
4. G. Li, V. Shrotriya, J. Huang, Y. Yao, T. Moriarty, K. Emery, and Y. Yang, Nature Mat. 4, 864 (2005).
5. H. Y. Chen, J. Hou, S. Zhang, Y. Liang, G. Yang, Y. Yang, L. Yu, Y. Wu and G. Li, Nature Photonics, 3, 649 (2009).
6. C. W. Tang and S. A. van Slyke, Appl. Phys. Lett., 51, 913 (1987).
7. R. H. Friend, Nature 397, 121 (1999)
8. Z. Bao, A. J. Lovinger, and A. Dodabaladur, Appl. Phys. Lett. 69, 3066 (1996).
9. G. Horowitz, Adv. Mat. 10, 365 (1998).
10. K. Tanigaki, T. W. Ebbesen, S. Saito, J. Mizuki, J. S. Tsai, Y. Kubo and S. Kuroshima, Nature 352, 222 (1991).
11. M. Cinchetti, K. Heimer, J. P. Wüstenberg, O. Andreyev, M. Bauer, S. Lach, C. Ziegler, Y. Gao, and M. Aeschlimann, Nat. Mat. 8, 115 (2009).
12. Tokito, S., Noda, K., Taga, Y., J. Phys. D-Appl. Phys., 29, 2750 (1996).
13. F. X. Wang, X. F. Qiao, T. Xiong and D. G. Ma, Org. Elec., 9, 985 (2008).
14. S. Reineke, F. Linder, G. Schwart, N. Seidler, K. Wa;zer, B. Lussem and K. Leo, Nature, 459, 234 (2009).
15. Shrotriya, V., Li, G., Yao, Y., Chu, C. W., Yang, Y., Appl. Phys. Lett., 88, (2006).
16. M. D. Irwin, D. B. Buchholz, A. W. Hains, R. P. H. Chang, and T. J. Marks, PNAS 105, 2783 (2008).
17. D. Y. Kim, J. Subbiah and Franky So, H. Ding, Irfan and Y. Gao, Appl. Phys. Letts. 95, 093304 (2009).
18. M. Kroger, S. Hamwi, J. Meyer, T. Riedle, W. Kowalsky and A. Kahn, Apl. Phys. Letts., 95, 123301 (2009).
19. Irfan, H. Ding, Y. Gao, D. Y. Kim, J. Subbiah and Franky So, Appl. Phys. Letts. 96, 073304 (2010).
20. T. Matasushima, Y. Kinoshita, and H. Murata, Appl. Phys. Lett., 91, 253504 (2007).
21. M. Kroger, S. Hamwi, J. Meyer, T. Riedle, W. Kowalsky and A. Kahn, Org. Elec., 10, 932 (2009).
22. M. Zhang, Irfan, H. Ding, Y. Gao, and C. W. Tang, Appl. Phys. Letts., 96, 183301 (2010).
23. Irfan, H. Ding, Y. Gao, D. Y. Kim, J. Subbiah, C. Small, and Franky So, Appl. Phys. Letts. 96, 243307 (2010).
24. Y. Park, V. Choong, Y. Gao, B. R. Hsieh, and C. W. Tang, Appl. Phys. Letts. 68, 2699 (1996).
25. X. M. Ding, H. L. Hung, L. F. Cheng, X. Y. Hou, C. S. Lee, and S. T. Lee, Appl. Phys. Lett. 76, 2704 (2000).
26. A. Sharma, A. Haldi, W. J. Potscavage, P. J. Hotchkiss, S. R. Marder and B. Kippelen, J. Mat. Chem. 19, 5298 (2009).
27. Irfan, S. Graber, F. So, and Y. Gao, Adv. Funct. Mater 2011 (under preparation).
28. Irfan, S. Graber, and Y. Gao, US Patent 2011 (under preparation).
29. L. Cattin, F. Dahou, Y. Lare, M. Morsli, R. Tricot, S. Houari, A. Mokrani, K. Jondo, A. Khelil, K. Napo, and J. C. Bernede, J. Appl. Phys. 105, 034507 (2009).
30. Irfan, and Y. Gao, Appl. Surf. Sci. (2011) (under preparation).
31. M. A. Chesters, and G. A. Somerjai, Surf. Sci. 52, 21 (1975).