High magnetoresistance in graphene nanoribbon heterojunction

Applied Physics Letters

Volumn 101, Issue 18, 2012, Pages

  Bala Kumar, S ^a   Jalil, M B A ^a   Tan, S G ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b DATA STORAGE INSTITUTE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGIES; GRAPHENE NANO-RIBBON; NANORIBBONS; ORTHOGONALITY; SEMICONDUCTOR-TYPE; SUBBANDS;

FIELD EFFECT TRANSISTORS; GRAPHENE; MAGNETORESISTANCE; NANOSTRUCTURES; QUANTUM HALL EFFECT;

HETEROJUNCTIONS;

EID: 84868660985     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4765364     Document Type: Article

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