SCOPUS 정보 검색 플랫폼

Nanoscale

Volumn 4, Issue 3, 2012, Pages 982-985

Modelling very large magnetoresistance of graphene nanoribbon devices

(2) Bala Kumar, S a Guo, Jing a

a J Crayton Pruitt Family Department of Biomedical Engineering (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED MAGNETIC FIELDS; DEVICE APPLICATION; EDGE ROUGHNESS; FERROMAGNETIC CONTACTS; GRAPHENE NANO-RIBBON; LANDAU LEVELS; LOW TEMPERATURES; MR RATIO; REALISTIC DEVICES; ROOM TEMPERATURE; SPATIAL SEPARATION; TRANSPORT STATE;

ELECTRIC FIELDS; ELECTRIC RESISTANCE; FIELD EFFECT TRANSISTORS; GRAPHENE; MAGNETIC FIELDS; MAGNETORESISTANCE;

MAGNETOELECTRONICS;

EID: 84856690538 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c2nr11507g Document Type: Article

Times cited : (12)

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