Step-gate polysilicon nanowires field effect transistor compatible with CMOS technology for label-free DNA biosensor

Biosensors and Bioelectronics

Volumn 40, Issue 1, 2013, Pages 141-146

  Wenga, G ^a   Jacques, E ^a   Salaun A C ^a   Rogel, R ^a   Pichon, L ^a   Geneste, F ^a  

^a UNIVERSITÉ DE RENNES 1   (France)

Author keywords

Bio sensor; CMOS compatibility; DNA hybridization; Polycrystalline silicon nanowire FET (poly Si NW FET); Spacer formation technique

Indexed keywords

BIOINFORMATICS TOOLS; BIOLOGICAL SPECIES; CMOS COMPATIBILITY; CMOS TECHNOLOGY; DETECTION LIMITS; DIRECT DETECTION; DNA BIOSENSORS; DNA HYBRIDIZATION; DNA SENSORS; ELECTRICAL SENSORS; ELECTRONIC SENSORS; FABRICATION PROCEDURE; FLUORESCENCE-BASED DETECTION; HIGH SURFACE-TO-VOLUME RATIO; LABEL FREE; LOW COST FABRICATION; LOW COSTS; LOW-COST DEVICES; NANO DEVICE; POLYSILICON NANOWIRES; RESEARCH EFFORTS; SENSITIVE DETECTION; SIDEWALL SPACER; SILICON NANOWIRES; SPACER FORMATION TECHNIQUE; ULTRASENSITIVE;

BIOINFORMATICS; BIOSENSORS; CMOS INTEGRATED CIRCUITS; DNA; NANOWIRES; POLYSILICON; SENSORS;

FIELD EFFECT TRANSISTORS;

COMPLEMENTARY DNA; NANOWIRE; SILICONE;

ARTICLE; BIOSENSOR; DNA DETERMINATION; DNA HYBRIDIZATION; DNA SEQUENCE; ELECTRONIC SENSOR; FIELD EFFECT TRANSISTOR; GENETIC COMPATIBILITY; LIMIT OF DETECTION; NANOBIOTECHNOLOGY; NANODEVICE; NANOFABRICATION;

BIOSENSING TECHNIQUES; CONDUCTOMETRY; DNA; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; REPRODUCIBILITY OF RESULTS; SENSITIVITY AND SPECIFICITY; SEQUENCE ANALYSIS, DNA; SILICON; STAINING AND LABELING; TRANSISTORS, ELECTRONIC;

EID: 84868640313     PISSN: 09565663     EISSN: 18734235     Source Type: Journal    
DOI: 10.1016/j.bios.2012.07.001     Document Type: Article

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