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The 340 nm PL peak under the excitation wavelength of 290 nm might originate from the direct transitions, since when the size of SiC nanostructures are very small (i.e., 2.6 nm), they may turn to direct bandgap. Calculations through density functional theory have predicted that SiC nanotubes have direct bandgaps when they are fully saturated (see, R. L. Zhou, R. Z. Zuo, L. Wang, B. H. Zhang, B. C. Pan, J. Appl. Phys. 2011, 109, 084318). Such kind of direct-bandgap transition of Si NCs has been theoretically predicted and experimentally observed. The detailed origin of the 340 nm peak will be studied further.
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