Size- and surface-dependent electronic structures of crystalline SiC nanotubes

Journal of Applied Physics

Volumn 109, Issue 8, 2011, Pages

  Zhou, R L ^a   Zuo, R Z ^a   Wang, L ^a   Zhang, B H ^a   Pan, B C ^b  

^a HEFEI UNIVERSITY OF TECHNOLOGY   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

APPLICATION PROSPECT; BAND GAPS; DIRECT BAND GAP; HYDROGEN ATOMS; OPTOELECTRONIC PROPERTIES; QUANTUM CONFINEMENT EFFECTS; SIC NANOTUBES; SURFACE EFFECT; SURFACE SATURATION; VALANCE BANDS; WALL THICKNESS;

ATOMS; DENSITY FUNCTIONAL THEORY; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; HYDROGEN; NANOTUBES; OPTOELECTRONIC DEVICES;

SILICON CARBIDE;

EID: 79955742393     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3567114     Document Type: Article

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