Optoelectronic properties of nanocolumn InGaN/GaN LEDs

IEEE Transactions on Electron Devices

Volumn 59, Issue 11, 2012, Pages 2979-2987

  Sacconi, Fabio ^a   Der Maur, Matthias Auf ^a   Di Carlo, Aldo ^a  

^a UNIVERSITY OF ROME TOR VERGATA   (Italy)

Author keywords

Light emitting diode (LED); nanocolumn; nitrides; quantum

Indexed keywords

ALLOY COMPOSITIONS; COLUMN BOUNDARIES; COLUMN SIZE; EMISSION ENERGIES; INGAN/GAN; LATERAL SCALE; MULTISCALES; NANOCOLUMN; NANOCOLUMN LIGHT EMITTING DIODES; OPTOELECTRONIC PROPERTIES; PIN DIODE; QUANTUM; QUANTUM CALCULATION; RELAXATION EFFECT; STRAIN MAPS;

GALLIUM NITRIDE; NITRIDES; OPTICAL PROPERTIES; QUANTUM CHEMISTRY;

LIGHT EMITTING DIODES;

EID: 84867899586     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2210897     Document Type: Article

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