Si-based flexible memristive systems constructed using top-down methods

ACS Applied Materials and Interfaces

Volumn 3, Issue 10, 2011, Pages 3957-3961

  Moon, Taeho ^a   Kang, Jeongmin ^a   Han, Yong ^a   Kim, Chunjoong ^b   Jeon, Youngin ^a   Kim, Hoyoung ^a   Kim, Sangsig ^a  

^a Korea University   (South Korea)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SI; BENDING CYCLES; FILM PATTERNING; HEAVILY DOPED; NON-VOLATILE MEMORIES; P-TYPE SI; PLASTIC SUBSTRATES; RECTIFYING BEHAVIORS; RESISTANCE RATIO; SECONDARY ION MASS SPECTROSCOPY; SI WAFER; SI-BASED; SWITCHING MECHANISM; TOP-DOWN METHODS; TUNNELING CURRENT;

AMORPHOUS FILMS; AMORPHOUS SILICON; DISTILLATION; NANOWIRES; SECONDARY ION MASS SPECTROMETRY; SILICON; SILICON WAFERS; SILVER; TRANSMISSION ELECTRON MICROSCOPY; WET ETCHING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 84867894481     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am2008344     Document Type: Article

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