Electric bistability induced by incorporating self-assembled monolayers/aggregated clusters of azobenzene derivatives in pentacene-based thin-film transistors

ACS Applied Materials and Interfaces

Volumn 4, Issue 10, 2012, Pages 5483-5491

  Tseng, Chiao Wei ^a   Huang, Ding Chi ^b   Tao, Yu Tai ^a,b  

^a INSTITUTE OF CHEMISTRY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

electric bistability; organic field effect transistors; organic memory devices

Indexed keywords

ACTIVE CHANNELS; AZOBENZENE DERIVATIVES; AZOBENZENE MOIETY; BENZENE RING; BI-STABLE STATE; DIELECTRIC SURFACE; DISCRETE MULTILAYERS; ELECTRIC BISTABILITY; FIELD-EFFECT MOBILITIES; FILM STRUCTURE; GATE BIAS; ORGANIC MEMORY DEVICES; PENTACENES; RETENTION CHARACTERISTICS; RETENTION TIME; THRESHOLD VOLTAGE SHIFTS; TRAP SITES;

BENZENE; COMPOSITE FILMS; HYSTERESIS; ORGANIC FIELD EFFECT TRANSISTORS; PHOTOEXCITATION; SELF ASSEMBLED MONOLAYERS; THIN FILM TRANSISTORS;

SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 84867837812     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am3013906     Document Type: Article

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