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Volumn 51, Issue 9 PART 2, 2012, Pages

Film thickness dependence of ferroelectric properties of (111)-Oriented epitaxial Bi(Mg 1/2Ti 1/2)O 3 films

(7) Oikawa, Takahiro a Yasui, Shintaro a Watanabe, Takayuki b Yabuta, Hisato b Ehara, Yoshitaka a Fukui, Tetsuro b Funakubo, Hiroshi a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

b CANON INC (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COERCIVE FIELD; FERROELECTRIC PROPERTY; RELATIVE DIELECTRIC CONSTANT; RHOMBOHEDRAL SYMMETRY; ROOM TEMPERATURE; SRTIO; THICKNESS DEPENDENCE;

EPITAXIAL GROWTH; FERROELECTRIC FILMS; FERROELECTRIC MATERIALS; FERROELECTRICITY; FILM THICKNESS; PULSED LASER DEPOSITION; SUBSTRATES;

EPITAXIAL FILMS;

EID: 84867750780 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.51.09LA04 Document Type: Conference Paper

Times cited : (17)

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