Combinatorial substrate epitaxy: A high-throughput method for determining phase and orientation relationships and its application to BiFeO 3/TiO 2 heterostructures

Acta Materialia

Volumn 60, Issue 19, 2012, Pages 6486-6493

  Zhang, Yiling ^a   Schultz, Andrew M ^a   Li, Li ^a   Chien, Harry ^a   Salvador, Paul A ^a   Rohrer, Gregory S ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

Crystal growth; EBSD; Epitaxy; Interfaces; Orientation relationships

Indexed keywords

EBSD; ELECTRON BACK SCATTER DIFFRACTION; GENERAL MODEL; HIGH-INDEX; HIGH-THROUGHPUT METHOD; IN-PLANE ORIENTATION; INTERFACE PLANES; LIMITING CASE; ORIENTATION RELATIONSHIP; POLYCRYSTALLINE BIFEO; SUBSTRATE FILMS; SUBSTRATE ORIENTATION; THREE-DIMENSIONAL ALIGNMENTS; TIO; TWO-DIMENSIONAL LATTICES;

CRYSTAL GROWTH; EPITAXIAL GROWTH; OXIDE MINERALS; PULSED LASER DEPOSITION; SUBSTRATES; THREE DIMENSIONAL; TITANIUM DIOXIDE;

INTERFACES (MATERIALS);

EID: 84867571743     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2012.07.060     Document Type: Article

References (35)

1. N.V. Burbure, P.A. Salvador, and G.S. Rohrer J Am Ceram Soc 89 2006 2943
2. N.V. Burbure, P.A. Salvador, and G.S. Rohrer Chem Mater 22 2010 5831
3. N.V. Burbure, P.A. Salvador, and G.S. Rohrer Chem Mater 22 2010 5823
4. Y.L. Zhang, A.M. Schultz, P.A. Salvador, and G.S. Rohrer J Mater Chem 21 2011 4168
5. M.A. Fox, and M.T. Dulay Chem Rev 93 1993 341
6. R. Hengerer, L. Kavan, P. Krtil, and M. Grätzel J Electrochem Soc 147 2000 1467
7. P.A.M. Hotsenpiller, J.D. Bolt, W.E. Farneth, J.B. Lowekamp, and G.S. Rohrer J Phys Chem B 102 1998 3216
8. J.B. Lowekamp, G.S. Rohrer, P.A.M. Hotsenpiller, J.D. Bolt, and W.E. Farneth J Phys Chem B 102 1998 7323
9. O.Y. Gorbenko, S.V. Samoilenkov, I.E. Graboy, and A.R. Kaul Chem Mater 14 2002 4026
10. J.M. Moreau, C. Michel, R. Gerson, and W.J. James J Phys Chem Solids 32 1971 1315
11. S. Geller, and V.B. Bala Acta Crystallogr 9 1956 1019
12. A. Okazaki, and M. Kawamina Mater Res Bull 8 1973 545
13. N.V. Burbure, P.A. Salvador, and G.S. Rohrer J Am Ceram Soc 93 2010 2530
14. S.A. Chambers, C.M. Wang, S. Thevuthasan, T. Droubay, D.E. McCready, and A.S. Lea Thin Solid Films 418 2002 197
15. S. Chen, M.G. Mason, H.J. Gysling, G.R. Pazpujalt, T.N. Blanton, and T. Castro J Vac Sci Technol A - Vac Surf Films 11 1993 2419
16. P. Fisher, O. Maksimov, H. Du, V.D. Heydemann, M. Skowronski, and P.A. Salvador Microelectron J 37 2006 1493
17. W. Gao, R. Klie, and E.I. Altman Thin Solid Films 485 2005 115
18. G.S. Herman, and Y. Gao Thin Solid Films 397 2001 157
19. C.C. Hsieh, K.H. Wu, J.Y. Juang, T.M. Uen, J.Y. Lin, and Y.S. Gou J Appl Phys 92 2002 2518
20. R.J. Kennedy, and P.A. Stampe J Cryst Growth 252 2003 333
21. A. Lotnyk, S. Senz, and D. Hesse Thin Solid Films 515 2007 3439
22. A. Lotnyk, S. Senz, and D. Hesse J Phys Chem C 111 2007 6372
23. M. Murakami, Y. Matsumoto, K. Nakajima, T. Makino, Y. Segawa, and T. Chikyow Appl Phys Lett 78 2001 2664
24. V.F. Silva, V. Bouquet, S. Deputier, S. Boursicot, S. Ollivier, and I.T. Weber J Appl Crystallogr 43 2010 1502
25. W. Sugimura, T. Yamazaki, H. Shigetani, J. Tanaka, and T. Mitsuhashi Jpn J Appl Phys Part 1 - Reg Pap Short Notes Rev Pap 36 1997 7358
26. X. Weng, P. Fisher, M. Skowronski, P.A. Salvador, and O. Maksimovc J Cryst Growth 310 2008 545
27. S. Yamamoto, T. Sumita, T. Yamaki, A. Miyashita, and H. Naramoto J Cryst Growth 237 2002 569
28. C.J. Howard, T.M. Sabine, and F. Dickson Acta Crystallogr Sec B - Struct Sci 47 1991 462
29. R.G. Rhodes Acta Crystallogr 4 1951 105
30. A.M. Schultz, Y.L. Zhang, P.A. Salvador, and G.S. Rohrer ACS Appl Mater Interf. 3 2011 1562
31. B.L. Adams, S.I. Wright, and K. Kunze Metal Trans A 24 1993 819
32. D.H. Lowndes, D.B. Geohegan, A.A. Puretzky, D.P. Norton, and C.M. Rouleau Science 273 1996 898
33. F.J. Humphreys, Y. Huang, I. Brough, and C. Harris J Microsc 195 1999 212
34. M. Okeeffe Acta Crystallogr Sec A 33 1977 924
35. S.M. Selbach, M.A. Einarsrud, and T. Grande Chem Mater 21 2009 169