Biased driven resonant tunneling through a double barrier graphene based structure

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 42, Issue 5, 2010, Pages 1781-1786

  Biswas, R ^a   Mukhopadhyay, S ^b   Sinha, C ^b  

^a PK College   (India)

^b DEPARTMENT OF MATERIALS SCIENCE   (India)

Author keywords

Applied bias; Conductivity; Resonant tunneling

Indexed keywords

APPLIED BIAS; BALLISTIC CONDUCTANCE; BARRIER WIDTHS; DOUBLE BARRIERS; DOUBLE-BARRIER STRUCTURES; EXTERNAL FIELDS; FERMI ENERGY; GLANCING INCIDENCE; GRAPHENES; HOMOGENEOUS ELECTRIC FIELD; NORMAL INCIDENCE; STATIC ELECTRIC FIELDS; TRANSMISSION COEFFICIENTS;

ELECTRIC FIELDS; GRAPHENE; GRAPHITE; MOTION ESTIMATION; WIND TUNNELS;

RESONANT TUNNELING;

EID: 77649182257     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2010.01.048     Document Type: Article

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