Nonlinear model-based control of the Czochralski process III: Proper choice of manipulated variables and controller parameter scheduling

Journal of Crystal Growth

Volumn 360, Issue 1, 2012, Pages 3-11

  Neubert, M ^a   Winkler, J ^b  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^b DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

A1. Model based feedback control; A1. State observer; A2. Czochralski method; B2. Semiconducting germanium; B2. Semiconducting III V materials; B2. Semiconducting silicon

Indexed keywords

CONTROLLER PARAMETER SCHEDULING; CONTROLLER PERFORMANCE; CONTROLLER STRUCTURES; CRYSTAL RADIUS; CZOCHRALSKI PROCESS; CZOCHRALSKI TECHNIQUE; INTERFACE MOBILITY; MANIPULATED VARIABLES; MATERIAL PROPERTY; MODEL-BASED CONTROL; MODEL-BASED OPC; PI CONTROLLER; PI CONTROLLER PARAMETERS; SCHEDULING STRATEGIES; SEMI CONDUCTING III-V MATERIALS; STATE OBSERVER; SYSTEM RESPONSE; THERMAL SYSTEMS;

CONTROLLERS; CRYSTAL GROWTH FROM MELT; INTERFACES (MATERIALS); MATERIALS PROPERTIES; NONLINEAR SYSTEMS; PROFITABILITY; SCHEDULING; THERMAL CONDUCTIVITY;

PROCESS CONTROL;

EID: 84867524526     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.03.018     Document Type: Conference Paper

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