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Volumn 48, Issue 90, 2012, Pages 11136-11138

FET performance and substitution effect on 2,6-dithienylanthracene devices prepared by photoirradiation of their diketone precursors

(11) Yamada, Hiroko a,b Ohashi, Chika c Aotake, Tatsuya a Katsuta, Shuhei a Honsho, Yoshihito d Kawano, Hiroo e Okujima, Tetsuo e Uno, Hidemitsu e Ono, Noboru e Seki, Shu d Nakayama, Ken Ichi b,c

a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

c YAMAGATA UNIVERSITY (Japan)

d OSAKA UNIVERSITY (Japan)

e EHIME UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

1,2 DICARBONYL DERIVATIVE; 2,6 DITHIENYLANTHRACENE; ANTHRACENE DERIVATIVE; DIKETONE; UNCLASSIFIED DRUG;

ARTICLE; CONTROLLED STUDY; ELECTRICITY; FIELD EFFECT TRANSISTOR; IRRADIATION; MICROWAVE RADIATION; PHOTOCHEMISTRY; PRECURSOR;

EID: 84867492814 PISSN: 13597345 EISSN: 1364548X Source Type: Journal
DOI: 10.1039/c2cc35439j Document Type: Article

Times cited : (21)

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